Comment on “Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots”

2010 ◽  
Vol 114 (39) ◽  
pp. 16859-16859
Author(s):  
Kirill A. Velizhanin
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates

Reply to “Comment on ’Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots’”

2010 ◽  
Vol 114 (39) ◽  
pp. 16860-16860
Author(s):  
Y. Fu ◽  
Y.-H. Zhou ◽  
Haibin Su ◽  
F. Y. C. Boey ◽  
H. Ågren
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates

Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots

2010 ◽  
Vol 114 (9) ◽  
pp. 3743-3747 ◽  
Author(s):  
Y. Fu ◽  
Y.-H. Zhou ◽  
Haibin Su ◽  
F. Y. C. Boey ◽  
H. Ågren
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Semiconductor Quantum Dots ◽  
Recombination Rates

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

Impact Ionization and Auger Recombination in Semiconductors: Implementation Within the Flapw Code

2001 ◽  
Vol 677 ◽  
Author(s):  
S. Picozzi ◽  
A. Continenza ◽  
R. Asahi ◽  
W. Mannstadt ◽  
C. B. Geller ◽  
...  
Keyword(s):  
Brillouin Zone ◽  
Density Functional ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Momentum Conservation ◽  
Recombination Rates ◽  
Screened Exchange ◽  
Energy And Momentum ◽  
Final Impact ◽  
Ionization Rates

ABSTRACTWe present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all- electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along τ — X and τ —L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

scholarly journals Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5607-5613 ◽  
Author(s):  
Young-Shin Park ◽  
Jaehoon Lim ◽  
Nikolay S. Makarov ◽  
Victor I. Klimov
Keyword(s):  
Quantum Dots ◽  
Auger Recombination ◽  
Semiconductor Quantum Dots
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