A formalism for the indirect Auger effect. I

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbitrary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

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Impact Ionization and Auger Recombination in Semiconductors: Implementation Within the Flapw Code

MRS Proceedings ◽

10.1557/proc-677-aa4.17 ◽

2001 ◽

Vol 677 ◽

Author(s):

S. Picozzi ◽

A. Continenza ◽

R. Asahi ◽

W. Mannstadt ◽

C. B. Geller ◽

...

Keyword(s):

Brillouin Zone ◽

Density Functional ◽

Auger Recombination ◽

Impact Ionization ◽

Momentum Conservation ◽

Recombination Rates ◽

Screened Exchange ◽

Energy And Momentum ◽

Final Impact ◽

Ionization Rates

ABSTRACTWe present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all- electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along τ — X and τ —L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

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A formalism for the indirect Auger effect. II

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1976.0017 ◽

1976 ◽

Vol 347 (1651) ◽

pp. 565-573 ◽

Cited By ~ 14

Keyword(s):

Band Structure ◽

Auger Recombination ◽

Preceding Paper ◽

Recombination Coefficient ◽

Overlap Integrals ◽

Estimated Parameters ◽

Order Of Magnitude ◽

Auger Effect ◽

First Time ◽

Auger Recombination Rate

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.

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First Principles Calculations of Auger Recombination and Impact Ionization Rates in Semiconductors

Journal of Computational Electronics ◽

10.1023/b:jcel.0000011424.07265.d5 ◽

2003 ◽

Vol 2 (2-4) ◽

pp. 197-202 ◽

Cited By ~ 5

Author(s):

S. Picozzi ◽

R. Asahi ◽

A.J. Freeman

Keyword(s):

First Principles ◽

Auger Recombination ◽

Impact Ionization ◽

First Principles Calculations ◽

Ionization Rates

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Comment on “Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots”

The Journal of Physical Chemistry C ◽

10.1021/jp103681y ◽

2010 ◽

Vol 114 (39) ◽

pp. 16859-16859

Author(s):

Kirill A. Velizhanin

Keyword(s):

Quantum Dots ◽

Auger Recombination ◽

Impact Ionization ◽

Semiconductor Quantum Dots ◽

Recombination Rates

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Reply to “Comment on ’Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots’”

The Journal of Physical Chemistry C ◽

10.1021/jp1058676 ◽

2010 ◽

Vol 114 (39) ◽

pp. 16860-16860

Author(s):

Y. Fu ◽

Y.-H. Zhou ◽

Haibin Su ◽

F. Y. C. Boey ◽

H. Ågren

Keyword(s):

Quantum Dots ◽

Auger Recombination ◽

Impact Ionization ◽

Semiconductor Quantum Dots ◽

Recombination Rates

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Impact Ionization and Auger Recombination Rates in Semiconductor Quantum Dots

The Journal of Physical Chemistry C ◽

10.1021/jp9082486 ◽

2010 ◽

Vol 114 (9) ◽

pp. 3743-3747 ◽

Cited By ~ 26

Author(s):

Y. Fu ◽

Y.-H. Zhou ◽

Haibin Su ◽

F. Y. C. Boey ◽

H. Ågren

Keyword(s):

Quantum Dots ◽

Auger Recombination ◽

Impact Ionization ◽

Semiconductor Quantum Dots ◽

Recombination Rates

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Accurate First-Principles Detailed-Balance Determination of Auger Recombination and Impact Ionization Rates in Semiconductors

Physical Review Letters ◽

10.1103/physrevlett.89.197601 ◽

2002 ◽

Vol 89 (19) ◽

Cited By ~ 18

Author(s):

S. Picozzi ◽

R. Asahi ◽

C. B. Geller ◽

A. J. Freeman

Keyword(s):

First Principles ◽

Auger Recombination ◽

Impact Ionization ◽

Detailed Balance ◽

Ionization Rates

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Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

MRS Proceedings ◽

10.1557/proc-423-45 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 6

Author(s):

J. Kolnik ◽

I. H. Oguzman ◽

K. F. Brennan ◽

R. Wang ◽

P. P. Ruden

Keyword(s):

Electric Field ◽

Applied Electric Field ◽

Impact Ionization ◽

Full Range ◽

Avalanche Photodiode ◽

Ionization Rate ◽

Zinc Blende ◽

Valence Bands ◽

Impact Ionization Rate ◽

Ionization Rates

AbstractIn this paper, we present the first calculations of the electron and hole initiated interband impact ionization rate in zinc blende phase GaN as a function of the applied electric field strength. The calculations are performed using an ensemble Monte Carlo simulator including the full details of the conduction and valence bands along with a numerically determined, wave-vector dependent interband ionization transition rate determined from an empirical pseudopotential calculation. The first four conduction bands and first three valence bands, which fully comprise the energy range of interest for device simulation, are included in the analysis. It is found that the electron and hole ionization rates are comparable over the full range of applied electric field strengths examined. Based on these calculations an avalanche photodiode, APD, made from bulk zinc blende GaN then would exhibit poor noise and bandwidth performance. It should be noted however, that the accuracy of the band structure employed and the scattering rates is presently unknown since little experimental information is available for comparison. Therefore, due to these uncertainties, it is difficult to unequivocally conclude that the ionization rates are comparable.

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