Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3654-3657 ◽  
Author(s):  
Shengrui Xu ◽  
Yue Hao ◽  
Jincheng Zhang ◽  
Teng Jiang ◽  
Linan Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Yellow Luminescence ◽  
Gan Nanowires ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nonpolar Gan

Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

RSC Advances ◽  
2015 ◽  
Vol 5 (58) ◽  
pp. 47090-47097 ◽  
Author(s):  
Ji-Hyeon Park ◽  
Arjun Mandal ◽  
Dae-Young Um ◽  
San Kang ◽  
Da-som Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Blue Emission ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Capping Layer ◽  
Gan Nanowires ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Merits of InAlGaN capping layer over self-assembled InxGa1−xN/GaN quantum dots coaxially grown on n-GaN nanowires using MOCVD.

scholarly journals Photoluminescence and lasing characteristics of single nonpolar GaN microwires

RSC Advances ◽  
2017 ◽  
Vol 7 (35) ◽  
pp. 21541-21546
Author(s):  
S. S. Yan ◽  
A. Q. Chen ◽  
Y. Y. Wu ◽  
H. Zhu ◽  
X. H. Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nonpolar Gan

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.

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