Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

In x Ga 1-x N quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the In x Ga 1-x N QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100–200 nm by flow rate. And In x Ga 1-x N QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of In x Ga 1-x N QDs was discussed.

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Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots UsingIn situPatterning

Applied Physics Express ◽

10.1143/apex.4.112001 ◽

2011 ◽

Vol 4 (11) ◽

pp. 112001 ◽

Cited By ~ 5

Author(s):

Stephane Faure ◽

Masao Nishioka ◽

Satomi Ishida ◽

Denis Guimard ◽

Yasuhiko Arakawa

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Spectral Quality ◽

Chemical Vapor Deposition Growth ◽

Inas Quantum Dots ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications

IEEE Transactions on Energy Conversion ◽

10.1109/jstqe.2006.882663 ◽

2006 ◽

Vol 12 (6) ◽

pp. 1242-1254 ◽

Cited By ~ 2

Author(s):

H. H. Tan ◽

K. Sears ◽

S. Mokkapati ◽

Lan Fu ◽

Yong Kim ◽

...

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optoelectronic Device ◽

Organic Chemical ◽

Device Applications ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-0891-ee02-05 ◽

2005 ◽

Vol 891 ◽

Author(s):

Ronald A. Arif ◽

Nam-Heon Kim ◽

Luke J. Mawst ◽

Nelson Tansu

Keyword(s):

Quantum Dots ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Emission Wavelength ◽

Organic Chemical ◽

Phosphorus Species ◽

Metal Organic ◽

Self Assembled ◽

Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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