Grain boundary diffusion creep of synthetic anorthite aggregates: The effect of water

1999 ◽  
Vol 104 (B5) ◽  
pp. 10483-10497 ◽  
Author(s):  
A. Dimanov ◽  
G. Dresen ◽  
X. Xiao ◽  
R. Wirth
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Creep ◽  
Effect Of Water

Reappraisal of grain boundary diffusion creep equations for nanocrystalline materials

2006 ◽  
Vol 12 (2) ◽  
pp. 107-113 ◽  
Author(s):  
Kyung-Tae Park ◽  
Chong Soo Lee ◽  
Dong Hyuk Shin ◽  
Yong Shin Lee ◽  
Won Jong Nam
Keyword(s):  
Grain Boundary ◽  
Nanocrystalline Materials ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Creep

Structure and Properties of Polycrystalline Materials From Simulation: An Interfacial Perspective

1999 ◽  
Vol 586 ◽  
Author(s):  
S. R. Phillpot ◽  
P. Keblinski ◽  
D. Wolf ◽  
F. Cleri
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Simulation Method ◽  
High Energy ◽  
Grain Boundary Diffusion ◽  
Dynamics Simulation ◽  
Polycrystalline Materials ◽  
Diffusion Creep ◽  
Fcc Metals

ABSTRACTWe have recently developed a novel molecular-dynamics simulation method to grow polycrystals from a melt containing randomly oriented crystalline seeds. The resulting microstructures contain only randomly oriented (i.e., high-energy) grain boundaries. We find that these grain boundaries, which are highly constrained by their close proximity to grain junctions, are highly disordered in fcc metals and amorphous in silicon. From simulations of infinitely extended high-energy grain boundaries in bicrystals, we find that such highly disordered and amorphous grain boundaries are actually the thermodynamic ground state; by contrast, low-energy grain boundaries are crystalline. High-energy grain boundaries in diamond, however, are structurally ordered at the expense of a significant amount of graphite-like bonding. We show that these complex grain boundary structures have important effects on properties including grain boundary diffusion (fcc metals and silicon), grain boundary diffusion creep (silicon) and grain boundary electrical activity and strength (diamond). The implications for engineering materials with prescribed properties are discussed.

Effects of grain growth on grain-boundary diffusion creep by molecular-dynamics simulation

2004 ◽  
Vol 52 (7) ◽  
pp. 1971-1987 ◽  
Author(s):  
A.J. Haslam ◽  
V. Yamakov ◽  
D. Moldovan ◽  
D. Wolf ◽  
S.R. Phillpot ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Dynamics Simulation ◽  
Diffusion Creep

Computer simulation of grain-boundary diffusion creep

2002 ◽  
Vol 50 (15) ◽  
pp. 3941-3955 ◽  
Author(s):  
J.M. Ford ◽  
J. Wheeler ◽  
A.B. Movchan
Keyword(s):  
Computer Simulation ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Creep

Grain boundary diffusion creep in magnesium

Metal Science ◽  
1977 ◽  
Vol 11 (11) ◽  
pp. 504-508 ◽  
Author(s):  
I. G. Crossland ◽  
R. B. Jones
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Creep
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