Emergence of the geometric phase from quantum measurement back-action

2019 ◽  
Vol 15 (7) ◽  
pp. 665-670 ◽  
Author(s):  
Young-Wook Cho ◽  
Yosep Kim ◽  
Yeon-Ho Choi ◽  
Yong-Su Kim ◽  
Sang-Wook Han ◽  
...  
Author(s):  
Aashish A. Clerk

After a quick review of the basic theory of quantum optomechanical systems, based largely on linearized Heisenberg–Langevin equations, this chapter focuses on selected topics related to quantum measurement and quantum optomechanics. Included are: a comprehensive discussion of the quantum limit on the added noise of a continuous position detector, following the quantum linear response approach; a detailed discussion of the role of noise correlations, and how these can be achieved in an optomechanical cavity (by using squeezed input light, or by modifying the choice of measured output quadrature); and a discussion of back-action evading measurements of a mechanical quadrature, discussing how this can be achieved in a two-tone driven cavity system. The chapter ends with a quick introduction to the theory of conditional continuous quantum measurement, and a discussion on how a back-action evading measurement can be used to produce conditional mechanical squeezed states.


Quantum 20/20 ◽  
2019 ◽  
pp. 181-200
Author(s):  
Ian R. Kenyon

Heisenberg’s back action and Robertson’s intrinsic uncertainty are presented. von Neumann’s analysis of quantum measurement is recounted. Advanced LIGO is used as an example of quantum measurement: giant Michelson interferometers achieve sensitivity to motion of 1 part in 1021. The discovery at LIGO of gravitational waves is outlined. Then the standard quantum limit is deduced. The use of cavities in the interferometer arms to increase the photon flux is described. The potential for improvement by squeezing the vacuum at the blank input port is discussed. Prospects for speed interferometry are outlined.


Author(s):  
Vladimir B. Braginsky ◽  
Farid Ya Khalili ◽  
Kip S. Thorne
Keyword(s):  

1996 ◽  
Vol 193 (Part_1_2) ◽  
pp. 226-227
Author(s):  
H. Schmiedel
Keyword(s):  

Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


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