scholarly journals The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Shengjun Zhou ◽  
Xingtong Liu ◽  
Han Yan ◽  
Yilin Gao ◽  
Haohao Xu ◽  
...  
2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.


2013 ◽  
Vol 22 (4) ◽  
pp. 047805 ◽  
Author(s):  
Rong Jiang ◽  
Hai Lu ◽  
Dun-Jun Chen ◽  
Fang-Fang Ren ◽  
Da-Wei Yan ◽  
...  

2009 ◽  
Vol 206 (11) ◽  
pp. 2637-2640 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Doyeol Ahn ◽  
Bun-Hei Koo ◽  
Jong-Wook Kim

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Bing Xu ◽  
Hai Tao Dai ◽  
Shu Guo Wang ◽  
Fu-Chuan Chu ◽  
Chou-Hsiung Huang ◽  
...  

We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs). Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM), which is the explanation for the red-shift of photoluminescence (PL). Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.


2018 ◽  
Vol 18 (11) ◽  
pp. 7542-7547
Author(s):  
Tong Liu ◽  
Hong-Wei Wang ◽  
Yao Xiao ◽  
Yue Lin ◽  
Yi-Jun Lu ◽  
...  

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