scholarly journals Scaling silicon-based quantum computing using CMOS technology

Author(s):  
M. F. Gonzalez-Zalba ◽  
S. de Franceschi ◽  
E. Charbon ◽  
T. Meunier ◽  
M. Vinet ◽  
...  
2016 ◽  
Vol 2 (1) ◽  
Author(s):  
Joe O’Gorman ◽  
Naomi H Nickerson ◽  
Philipp Ross ◽  
John JL Morton ◽  
Simon C Benjamin

Abstract Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: there is a basic conflict between nanometre separation desired for qubit–qubit interactions and the much larger scales that would enable control and addressing in a manufacturable and fault-tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid-state spins, or ‘data qubits’, that are widely separated from one another. We use a second set of ‘probe’ spins that are mechanically separate from the data qubits and move in and out of their proximity. The spin dipole–dipole interactions give rise to phase shifts; measuring a probe’s total phase reveals the collective parity of the data qubits along the probe’s path. Using a protocol that balances the systematic errors due to imperfect device fabrication, our detailed simulations show that substantial misalignments can be handled within fault-tolerant operations. We conclude that this simple ‘orbital probe’ architecture overcomes many of the difficulties facing solid-state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.


Author(s):  
Zan Dong ◽  
Wei Wang ◽  
Beiju Huang ◽  
Xu Zhang ◽  
Ning Guan ◽  
...  

Author(s):  
R. G. Clark ◽  
R. Brenner ◽  
T. M. Buehler ◽  
V. Chan ◽  
N. J. Curson ◽  
...  

Author(s):  
Arnout Beckers ◽  
Farzan Jazaeri ◽  
Andrea Ruffino ◽  
Claudio Bruschini ◽  
Andrea Baschirotto ◽  
...  

2019 ◽  
Author(s):  
S. Kubicek ◽  
B. Govoreanu ◽  
J. Jussot ◽  
BT. Chan ◽  
N. Dumoulin-Stuyck ◽  
...  

2008 ◽  
Vol 1081 ◽  
Author(s):  
Weiqi Luo ◽  
Karthik Ravichandran ◽  
Wolfgang Windl ◽  
Leonardo R.C. Fonseca

AbstractCarbon nanotube (CNT) devices are studied as a possible alternative to the current silicon based CMOS technology. The contacts between CNTs and metal electrodes in such devices exert great influence on the device performance. In this study, ab-initio temperature accelerated dy-namics are performed to study the contact formation between CNTs and Ti electrodes. Results indicate that CNTs undergo significant structural deformation, resulting in a significant decrease of the device conductance. This finding may explain the discrepancy between experimental and simulated results in molecular devices. However, more effects may need to be taken into account as we discuss for the example of the size effect of CNTs.


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