Unsorted single walled carbon nanotubes enabled the fabrication of high performance organic thin film transistors with low cost metal electrodes

2013 ◽  
Vol 49 (78) ◽  
pp. 8791 ◽  
Author(s):  
Chad S. Smithson ◽  
Shiping Zhu ◽  
Tony Wigglesworth ◽  
Yiliang Wu
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Single Walled Carbon Nanotubes ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Metal Electrodes ◽  
Walled Carbon Nanotubes

Flexible organic thin-film transistors using single-walled carbon nanotubes as an activated channel

2010 ◽  
Vol 518 (22) ◽  
pp. 6168-6173
Author(s):  
Jae-Hong Kwon ◽  
Sang-Il Shin ◽  
Myung-Ho Chung ◽  
Ki-Young Dong ◽  
James Jungho Pak ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes

2010 ◽  
Vol 22 (24) ◽  
pp. 2698-2701 ◽  
Author(s):  
Yuki Asada ◽  
Yasumitsu Miyata ◽  
Yutaka Ohno ◽  
Ryo Kitaura ◽  
Toshiki Sugai ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
High Performance ◽  
Single Walled Carbon Nanotubes ◽  
Solution Processing ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

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