High-performance and operationally stable organic thin-film transistors using bi-buffer layers with low-cost electrodes

2013 ◽  
Vol 46 (38) ◽  
pp. 385104 ◽  
Author(s):  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Xinge Yu ◽  
Nanjia Zhou ◽  
Hui Lin
2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  

2019 ◽  
Vol 11 (10) ◽  
pp. 10089-10098 ◽  
Author(s):  
Hang Wang ◽  
Jun Huang ◽  
Mohammad Afsar Uddin ◽  
Bin Liu ◽  
Peng Chen ◽  
...  

2004 ◽  
Vol 126 (11) ◽  
pp. 3378-3379 ◽  
Author(s):  
Beng S. Ong ◽  
Yiliang Wu ◽  
Ping Liu ◽  
Sandra Gardner

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29164-29171 ◽  
Author(s):  
Kangjian Miao ◽  
Gil Jo Chae ◽  
Xiaoxue Wu ◽  
Qinghai Shu ◽  
Xin Zhu ◽  
...  

A semi-fluorinated DPP based polymer showed hole mobility about 3 times higher than did its non-fluorinated analogue.


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