The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55082-55086 ◽  
Author(s):  
Haoliang Huang ◽  
Zhenlin Luo ◽  
Yuanjun Yang ◽  
Mengmeng Yang ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Strain State ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

In situoptical characterization of metal-insulator transition in LaNiO3and SrTiO3perovskites in pulsed laser deposition chamber

2011 ◽  
Vol 84 (5-6) ◽  
pp. 501-508 ◽  
Author(s):  
Bruno Berini ◽  
Maxime Evain ◽  
Arnaud Fouchet ◽  
Yves Dumont ◽  
Elena Popova ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Deposition Chamber

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Strain engineering on the metal-insulator transition of VO2/TiO2 epitaxial films dependent on the strain state of vanadium dimers

2019 ◽  
Vol 115 (25) ◽  
pp. 251605 ◽  
Author(s):  
Bin Hong ◽  
Yuanjun Yang ◽  
Kai Hu ◽  
Yongqi Dong ◽  
Jingtian Zhou ◽  
...  
Keyword(s):  
Strain State ◽  
Strain Engineering ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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