Ultrafast phase change and long durability of BN-incorporated GeSbTe
2015 ◽
Vol 3
(8)
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pp. 1707-1715
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Keyword(s):
Ion Beam
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BN-incorporated amorphous Ge2Sb2Te5 (GST) films were deposited by an ion beam sputtering deposition method. The power-time-effect (PTE) diagrams showed that as the amount of BN increased, the crystallization temperature and phase change speed increased.