Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier

2015 ◽  
Vol 51 (79) ◽  
pp. 14750-14753 ◽  
Author(s):  
Guan-Hong Chen ◽  
Chang-Wei Yeh ◽  
Ming-Hua Yeh ◽  
Shih-Jung Ho ◽  
Hsueh-Shih Chen

Wide gamut LEDs using QD-silicone film protected by ALD TiO2 film. The QDs with multimodal size distribution are synthesised by a one-pot method.

2010 ◽  
Vol 22 (28) ◽  
pp. 3076-3080 ◽  
Author(s):  
Eunjoo Jang ◽  
Shinae Jun ◽  
Hyosook Jang ◽  
Jungeun Lim ◽  
Byungki Kim ◽  
...  

2020 ◽  
Vol 8 (7) ◽  
pp. 1901972
Author(s):  
Thanh‐Hai Le ◽  
Yunseok Choi ◽  
Semin Kim ◽  
Unhan Lee ◽  
Eunseo Heo ◽  
...  

ACS Omega ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 3234-3243 ◽  
Author(s):  
Cheng-Chun Chou ◽  
Tzong-Liu Wang ◽  
Wen-Janq Chen ◽  
Chien-Hsin Yang

2016 ◽  
Vol 661 ◽  
pp. 228-233 ◽  
Author(s):  
Min Lu ◽  
Xue Bai ◽  
Yijun Lin ◽  
Changyin Ji ◽  
Hua Wu ◽  
...  

2016 ◽  
Vol 52 (17) ◽  
pp. 3564-3567 ◽  
Author(s):  
Karam Han ◽  
Won Bin Im ◽  
Jong Heo ◽  
Woon Jin Chung

A complete inorganic quantum dot color converter for a white LED is achieved using silicate-based quantum-dot-embedded glasses (QDEGs).


Nanoscale ◽  
2016 ◽  
Vol 8 (11) ◽  
pp. 5835-5841 ◽  
Author(s):  
Xin Zhao ◽  
Weizhen Liu ◽  
Rui Chen ◽  
Yuan Gao ◽  
Binbin Zhu ◽  
...  

2017 ◽  
Vol 35 (2) ◽  
pp. 435-439 ◽  
Author(s):  
An Tang ◽  
Liduo Gu ◽  
Fengxiang Shao ◽  
Xidong Liu ◽  
Yongtao Zhao ◽  
...  

Abstract A series of red-emitting phosphors InNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction. The structure, size distribution and luminescence properties of the phosphors were respectively characterized by X-ray diffraction (XRD), laser particle size and molecular fluorescence spectrometer. The XRD results indicate that the phase-pure samples have been obtained and the crystal structure of the host has not changed under the Eu3+ and Bi3+ co-doping. The test of size distribution shows that the phosphor has a normal size distribution. The excitation spectra illustrate that the dominant sharp peaks are located at 394 nm (7F0→5L6) and 466 nm (7F0→5D2). Meanwhile, the emission spectra reveal that the phosphors excited by the wavelength of 394 nm or 466 nm have an intense red-emission line at 612 nm owing to the 5D0→7F2 transition of Eu3+. Bi3+ doping has not changed the peak positions except the photoluminescence intensity. The emission intensity is related to Bi3+ concentration, and it is up to the maximum when the Bi3+-doping concentration is 4 mol%. Due to good photoluminescence properties of the phosphor, the InNbO4:0.04Eu3+,0.04Bi3+ may be used as a red component for white light-emitting diodes.


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