Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5
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In this paper, the effect of Sb2Se on the phase change characteristics of Ge2Sb2Te5 (GST) is systemically studied for applications in phase-change random access memory (PRAM).
2011 ◽
Vol 50
(7)
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pp. 071201
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2017 ◽
Vol 5
(31)
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pp. 7820-7829
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2010 ◽
Vol 13
(2)
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pp. K8
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2006 ◽
Vol 45
(5A)
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pp. 3955-3958
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