Phase Change Characteristics of InxSb40-xTe60Chalcogenide Alloy for Phase Change Random Access Memory

2011 ◽  
Vol 50 (7) ◽  
pp. 071201 ◽  
Author(s):  
Jae-Jin Yun ◽  
Won-Jong Lee
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Characteristics

Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

CrystEngComm ◽  
2015 ◽  
Vol 17 (26) ◽  
pp. 4871-4876 ◽  
Author(s):  
Miao Wang ◽  
Yegang Lu ◽  
Xiang Shen ◽  
Guoxiang Wang ◽  
Jun Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Characteristics

In this paper, the effect of Sb2Se on the phase change characteristics of Ge2Sb2Te5 (GST) is systemically studied for applications in phase-change random access memory (PRAM).

scholarly journals Effect of Cu on the structure and phase-change characteristics of Sb2Te film for high-speed phase change random access memory

2015 ◽  
Vol 64 (15) ◽  
pp. 156102
Author(s):  
Wang Dong-Min ◽  
L Ye-Gang ◽  
Song san-Nian ◽  
Wang Miao ◽  
Shen Xiang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Characteristics

Effects of resonant bonding and structural distortion on the phase change properties of Sn2Sb2Se5

2017 ◽  
Vol 5 (31) ◽  
pp. 7820-7829 ◽  
Author(s):  
Min Ahn ◽  
Kwang-sik Jeong ◽  
Seungjong Park ◽  
Sungjin Park ◽  
Hoon Jung ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Structural Distortion ◽  
Access Memory ◽  
Chalcogenide Material ◽  
Change Characteristics ◽  
Memory Applications

The phase-change characteristics of Sn2Sb2Se5(SSS), a pseudo-binary chalcogenide material, were investigated for use in phase-change random access memory applications.

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory

THERMAL EXPANSION OF PHASE-CHANGE RANDOM ACCESS MEMORY CELLS

2008 ◽  
Vol 1072 ◽  
Author(s):  
Jianming Li ◽  
L.P. Shi ◽  
H.X. Yang ◽  
K.G. Lim ◽  
X.S. Miao ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Phase Change ◽  
Electrical Power ◽  
Thermal Strain ◽  
Three Dimensional ◽  
Amorphous State ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Three Dimensional Finite Element

ABSTRACTThree-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at the interfaces between electrodes and phase change layer and it is significantly larger than that within the phase change layer. It has been found that the peak thermal stress is linearly related to the voltage of electrical pulse in the reset process but once amorphous state is produced in the cell, a nonlinear relationship between thermal stress and electrical power exists. This paper reported the change of thermal stress during set process. It was found that the stress decreases significantly due to the amorphous active region during set processes.

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