Preferential 〈220〉 crystalline growth in nanocrystalline silicon films from 27.12 MHz SiH4 plasma for applications in solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54011-54018 ◽  
Author(s):  
Praloy Mondal ◽  
Debajyoti Das
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Grain Growth ◽  
Crystal Orientation ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Random Nucleation ◽  
Crystalline Growth ◽  
Nanocrystalline Silicon Films

Si-ncs are generally of 〈111〉 crystal orientation from random nucleation within poly-H network at grain-boundary, while Si ultra-ncs preferably harvest 〈220〉 alignment due to thermodynamically preferred grain growth by mono-H bonding at the boundary.

scholarly journals Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 759
Author(s):  
Luana Mazzarella ◽  
Anna Morales-Vilches ◽  
Lars Korte ◽  
Rutger Schlatmann ◽  
Bernd Stannowski
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Two Phase ◽  
Nanocrystalline Silicon Films

Doped hydrogenated nanocrystalline (nc-Si:H) and silicon oxide (nc-SiOx:H) materials grown by plasma-enhanced chemical vapor deposition have favourable optoelectronic properties originated from their two-phase structure. This unique combination of qualities, initially, led to the development of thin-film Si solar cells allowing the fabrication of multijunction devices by tailoring the material bandgap. Furthermore, nanocrystalline silicon films can offer a better carrier transport and field-effect passivation than amorphous Si layers could do, and this can improve the carrier selectivity in silicon heterojunction (SHJ) solar cells. The reduced parasitic absorption, due to the lower absorption coefficient of nc-SiOx:H films in the relevant spectral range, leads to potential gain in short circuit current. In this work, we report on development and applications of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) from material to device level. We address the potential benefits and the challenges for a successful integration in SHJ solar cells. Finally, we prove that nc-SiOx:H demonstrated clear advantages for maximizing the infrared response of c-Si bottom cells in combination with perovskite top cells.

Light-induced changes in diphasic nanocrystalline silicon films and solar cells

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1904-1908 ◽  
Author(s):  
Huiying Hao ◽  
Xianbo Liao ◽  
Xiangbo Zeng ◽  
Hongwei Diao ◽  
Ying Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Induced Changes ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Vacuum ◽  
2006 ◽  
Vol 81 (1) ◽  
pp. 126-128 ◽  
Author(s):  
Cui Min ◽  
Zhang Weijia ◽  
Wang Tianmin ◽  
Jin Fei ◽  
Li Guohua ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
High Conductivity ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Growth of Polymorphous/Nanocrystalline Silicon Films Deposited by PECVD at 13.56 MHz

2004 ◽  
Vol 455-456 ◽  
pp. 532-535 ◽  
Author(s):  
Leandro Raniero ◽  
Rodrigo Martins ◽  
Hugo Águas ◽  
S. Zang ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films

Diethylammonium Iodide Assisted Grain Growth with Sub‐Grain Cluster to Passivate Grain Boundary for CH 3 NH 3 PbI 3 Perovskite Solar Cells

2020 ◽  
Vol 8 (10) ◽  
pp. 2000412
Author(s):  
Lan Xiao ◽  
Zhengchun Wang ◽  
Tong Wu ◽  
Pingli Qin ◽  
Xueli Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Grain Growth ◽  
Perovskite Solar Cells

Light-induced metastability in thin nanocrystalline silicon films

2009 ◽  
Vol 89 (28-30) ◽  
pp. 2531-2539 ◽  
Author(s):  
M. Bauza ◽  
N.P. Mandal ◽  
A. Ahnood ◽  
A. Sazonov ◽  
A. Nathan
Keyword(s):  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Nanocrystalline Silicon Films
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