Phase engineering of MoS2 through GaN/AlN substrate coupling and electron doping

2016 ◽  
Vol 18 (48) ◽  
pp. 33351-33356 ◽  
Author(s):  
Bin Ouyang ◽  
Pengfei Ou ◽  
Yongjie Wang ◽  
Zetian Mi ◽  
Jun Song

A first principles study was performed to investigate the interface induced phase stability transition within MoS2 on top of GaN and AlN.

2018 ◽  
Vol 45 (1) ◽  
pp. 26-34 ◽  
Author(s):  
Mingjia Li ◽  
Xiaohua Min ◽  
Fei Ye ◽  
Ping Li ◽  
Congqian Cheng ◽  
...  

2010 ◽  
Vol 13 (4) ◽  
pp. 295-297 ◽  
Author(s):  
Bin Wen ◽  
Roderick Melnik ◽  
Shan Yao ◽  
Tingju Li

2019 ◽  
Vol 21 (30) ◽  
pp. 16818-16829 ◽  
Author(s):  
P. S. Ghosh ◽  
A. Arya

Formation energies of PuO2, α-Pu2O3 and sub-oxides PuO2−x (0.0 < x < 0.5) are determined using density functional theory employing generalised gradient approximation corrected with an effective Hubbard parameter.


2017 ◽  
Vol 46 (11) ◽  
pp. 3188-3192 ◽  
Author(s):  
Gao Xueyun ◽  
Ren Huiping ◽  
Li Yiming ◽  
Wang Haiyan

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