Phase engineering of MoS2 through GaN/AlN substrate coupling and electron doping
2016 ◽
Vol 18
(48)
◽
pp. 33351-33356
◽
Keyword(s):
A first principles study was performed to investigate the interface induced phase stability transition within MoS2 on top of GaN and AlN.
Keyword(s):
Keyword(s):
2018 ◽
Vol 137
◽
pp. 295-302
◽
2017 ◽
Vol 727
◽
pp. 579-595
◽
Keyword(s):
2010 ◽
Vol 13
(4)
◽
pp. 295-297
◽
2019 ◽
Vol 21
(30)
◽
pp. 16818-16829
◽
2017 ◽
Vol 46
(11)
◽
pp. 3188-3192
◽
2003 ◽
Vol 240
(1)
◽
pp. 45-54
◽