Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
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pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
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2021 ◽  
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pp. 385105 ◽  
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Huihuang Yang ◽  
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2011 ◽  
Vol 99 (24) ◽  
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2014 ◽  
Vol 105 (11) ◽  
pp. 113509 ◽  
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G. X. Liu ◽  
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...  

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