Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities
2016 ◽
Vol 4
(47)
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pp. 11298-11304
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The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.
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2019 ◽
Vol 52
(38)
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pp. 385105
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2019 ◽
Vol 30
(20)
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pp. 1904632
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2013 ◽
Vol 5
(7)
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pp. 2585-2592
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2017 ◽
Vol 43
(8)
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pp. 6130-6137
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2012 ◽
Vol 22
(4)
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pp. 1243-1250
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