scholarly journals Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16801-16822 ◽  
Author(s):  
Jingang Wang ◽  
Fengcai Ma ◽  
Mengtao Sun
Keyword(s):  
Transition Metal ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Atomic Level ◽  
Black Phosphorus ◽  
Metal Sulfides ◽  
Two Dimensional ◽  
Transition Metal Sulfides ◽  
Widespread Interest

In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.

scholarly journals High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Membranes ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 952
Author(s):  
Dewu Yue ◽  
Ximing Rong ◽  
Shun Han ◽  
Peijiang Cao ◽  
Yuxiang Zeng ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
Hexagonal Boron Nitride ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Critical Material ◽  
Device Applications ◽  
Uv Visible ◽  
Spectral Ranges ◽  
Very High

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

The Effect of γ-Al2O3, TiO2 and ZrO2 Supports on Hydrodesulfurization Activity of Transition-Metal Sulfides

2008 ◽  
Vol 73 (8-9) ◽  
pp. 945-955 ◽  
Author(s):  
Luděk Kaluža ◽  
Miroslav Zdražil
Keyword(s):  
Transition Metal ◽  
Aqueous Solutions ◽  
Model Reaction ◽  
Metal Sulfides ◽  
Vacuum Impregnation ◽  
Transition Metal Sulfides ◽  
Highly Active ◽  
System A ◽  
Benzothiophene Hydrodesulfurization ◽  
Hydrodesulfurization Activity

The transition metals V, Cr, Mn, Fe, Co, Ni, Mo, Ru, Rh, Pd, W, Re, Os, Ir and Pt were deposited from aqueous solutions of their salts onto conventional γ-Al2O3 and unconventional TiO2 and ZrO2 supports by vacuum impregnation and characterized in their sulfided form by a model reaction of benzothiophene hydrodesulfurization. It was found that the TiO2 and ZrO2 supports influenced predominantly positively the resulting activity of relatively low-active metals (V, Cr, Mn, Fe, Co, Ni, Mo, Ru, W and Os), whereas the highly active metals (Rh, Pd, Ir, Pt and Re) were influenced slightly negatively or not at all by those supports compared with the γ-Al2O3-supported system. A significant effect of the supports on the hydrodesulfurization-activity ranking of the transition-metal sulfides studied was ascertained.

Engineering Sulfur Vacancies into Fe9S10 Nanosheet Arrays for Efficient Alkaline Hydrogen Evolution

Nanoscale ◽  
2021 ◽  
Author(s):  
Wenjun He ◽  
Jianing Cheng ◽  
Yaohui Gao ◽  
Caichi Liu ◽  
Jianling Zhao ◽  
...  
Keyword(s):  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Metal Sulfides ◽  
Transition Metal Sulfides ◽  
Nanosheet Arrays ◽  
Excellent Activity ◽  
Earth Abundant ◽  
Iron Based

The development of earth-abundant transition metal sulfides electrocatalysts with excellent activity and stability toward alkaline hydrogen evolution reaction (HER) is critical but challenging. Iron-based sulfides are favored due to their...

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