Charge carrier transport dynamics in W/Mo-doped BiVO4: first principles-based mesoscale characterization

2019 ◽  
Vol 7 (7) ◽  
pp. 3054-3065 ◽  
Author(s):  
Viswanath Pasumarthi ◽  
Taifeng Liu ◽  
Michel Dupuis ◽  
Can Li

First principles-based mesoscale characterization of electron transport in W/Mo-doped BiVO4 reveals the existence of “stabilization” regions around dopant sites. The stabilization regions decrease slightly the electron polaron mobility, albeit the overall electrode conductivity increases.

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


2010 ◽  
Vol 97 (1) ◽  
pp. 013303 ◽  
Author(s):  
Matthias Schober ◽  
Selina Olthof ◽  
Mauro Furno ◽  
Björn Lüssem ◽  
Karl Leo

2015 ◽  
Vol 212 (11) ◽  
pp. 2553-2558 ◽  
Author(s):  
M. Pomorski ◽  
C. Delfaure ◽  
N. Vaissiere ◽  
H. Bensalah ◽  
J. Barjon ◽  
...  

2016 ◽  
Vol 18 (32) ◽  
pp. 22706-22711 ◽  
Author(s):  
E. Tea ◽  
C. Hin

Electron and hole non-radiative lifetimes in phosphorene are investigated by first principles calculations.


2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  

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