scholarly journals From flat to tilted: gradual interfaces in organic thin film growth

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 3834-3845 ◽  
Author(s):  
Laura Katharina Scarbath-Evers ◽  
René Hammer ◽  
Dorothea Golze ◽  
Martin Brehm ◽  
Daniel Sebastiani ◽  
...  

An unexpected growth mechanism for organic semiconductors on gold where the molecules approach their bulk structure over several interfacial layers.

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  

2014 ◽  
Vol 50 (69) ◽  
pp. 9954-9957 ◽  
Author(s):  
José M. Gallego ◽  
David Ecija ◽  
Nazario Martín ◽  
Roberto Otero ◽  
Rodolfo Miranda

PCBM molecules deposited on an exTTF layer grown on Au(111) exchange places with the exTTF molecules, expelling them to the outer surface, even at 150 K, when the surface diffusion of the exTTF molecules is completely frozen.


2009 ◽  
Vol 130 (12) ◽  
pp. 124701 ◽  
Author(s):  
A. Amassian ◽  
T. V. Desai ◽  
S. Kowarik ◽  
S. Hong ◽  
A. R. Woll ◽  
...  

2009 ◽  
Vol 103 (13) ◽  
Author(s):  
XueNa Zhang ◽  
Esther Barrena ◽  
Dipak Goswami ◽  
Dimas G. de Oteyza ◽  
Claudia Weis ◽  
...  

2015 ◽  
Vol 86 (11) ◽  
pp. 113108 ◽  
Author(s):  
A. Navarro-Quezada ◽  
M. Aiglinger ◽  
E. Ghanbari ◽  
Th. Wagner ◽  
P. Zeppenfeld

Author(s):  
Christian Teichert ◽  
Gregor Hlawacek ◽  
Adolf Winkler ◽  
Peter Puschnig ◽  
Claudia Draxl

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.


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