scholarly journals Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films

CrystEngComm ◽  
2020 ◽  
Vol 22 (33) ◽  
pp. 5464-5472
Author(s):  
Guillaume Noircler ◽  
Marta Chrostowski ◽  
Melvyn Larranaga ◽  
Etienne Drahi ◽  
Pere Roca i Cabarrocas ◽  
...  

Transmission electron microscopy techniques to better understand growth mechanisms and annealing of low temperature silicon epitaxy. HRTEM: thickness measurement, crystal morphology, and defect study. GPA (image processing): strain field analysis.

2008 ◽  
Vol 47 (7) ◽  
pp. 5330-5332 ◽  
Author(s):  
Satoshi Harui ◽  
Hidetoshi Tamiya ◽  
Takanobu Akagi ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  

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