scholarly journals Orbital energy mismatch engenders high-spin ground states in heterobimetallic complexes

2020 ◽  
Vol 11 (36) ◽  
pp. 9971-9977 ◽  
Author(s):  
Scott C. Coste ◽  
Tyler J. Pearson ◽  
Alison B. Altman ◽  
Ryan A. Klein ◽  
Brian A. Finney ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Spin ◽  
Ground States ◽  
Orbital Energy ◽  
Bimetallic Complex ◽  
Spin Configuration ◽  
Heterobimetallic Complexes ◽  
Orbital Energies ◽  
Tin Complexes

We report a series of high spin bimetallic transition metal–tin complexes. The unusual high spin configuration in a bimetallic complex is enabled by an energetic mismatch in the orbital energies, leading to lanthanide-like nonbonding interactions.

scholarly journals Synthesis and characterization of [7]triangulene

Nanoscale ◽  
2021 ◽  
Author(s):  
Shantanu Mishra ◽  
Kun Xu ◽  
Kristjan Eimre ◽  
Hartmut Komber ◽  
Ji Ma ◽  
...  
Keyword(s):  
High Spin ◽  
Ground States ◽  
Synthesis And Characterization ◽  
Spintronic Devices

Triangulene and its π-extended homologues constitute non-Kekulé polyradical frameworks with high-spin ground states, and are anticipated to be key components of organic spintronic devices. We report a combined in-solution and...

Effect of change in number of conduction electrons on the spin configuration in transition metal oxides

2008 ◽  
Vol 40 (6-7) ◽  
pp. 1078-1081 ◽  
Author(s):  
Emi Minamitani ◽  
Robert Roleda ◽  
Wilson Agerico Diño ◽  
Tomoya Kishi ◽  
Hiroshi Nakanishi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Spin Configuration ◽  
Conduction Electrons

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

Highly versatile heteroditopic ligand scaffolds for accommodating group 8, 9 & 11 heterobimetallic complexes

2017 ◽  
Vol 46 (41) ◽  
pp. 14406-14419 ◽  
Author(s):  
Mark R. D. Gatus ◽  
Mohan Bhadbhade ◽  
Barbara A. Messerle
Keyword(s):  
Transition Metal ◽  
Metal Ions ◽  
Transition Metal Ions ◽  
Heterobimetallic Complexes ◽  
Ligand Scaffolds

Two highly versatile xanthene scaffolds containing pairs of heteroditopic ligands were found to be capable of accommodating a range of transition metal ions, including Au(i), Ir(i), Ir(iii), Rh(i), and Ru(ii) to generate an array of heterobimetallic complexes.

scholarly journals Molecular cubes with high-spin ground states

2005 ◽  
Vol 6 (6) ◽  
pp. 565-570 ◽  
Author(s):  
Takuya Shiga ◽  
Hiroki Oshio
Keyword(s):  
High Spin ◽  
Ground States
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