Tunable Tunneling Magnetoresistance in In-plane double barrier Magnetic Tunnel Junctions based on B Vacancy h-NB Nanoribbons

Two Dimensional ◽

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after it has been proposed more than forty years. Here, an in-plane double...

Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study

Physical Review B ◽

10.1103/physrevb.97.174420 ◽

2018 ◽

Vol 97 (17) ◽

Cited By ~ 2

Author(s):

Junting Yang ◽

Jiawei Yan ◽

Shizhuo Wang ◽

Youqi Ke

Keyword(s):

Shot Noise ◽

First Principles ◽

Tunnel Junctions ◽

Double Barrier ◽

First Principles Study

Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

Applied Physics Letters ◽

10.1063/1.2362977 ◽

2006 ◽

Vol 89 (16) ◽

pp. 162501 ◽

Cited By ~ 32

Author(s):

Gen Feng ◽

Sebastiaan van Dijken ◽

J. M. D. Coey

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Tunnel Junctions ◽

Double Barrier ◽

Bias Voltage Dependence

Quantum-Well Based Tunneling Magnetoresistance Effect in Double-Barrier Magnetic Tunnel Junctions

10.7567/ssdm.2016.g-3-01 ◽

2016 ◽

Author(s):

X. Han

Keyword(s):

Quantum Well ◽

Tunnel Junctions ◽

Magnetoresistance Effect ◽

Temperature and bias-voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/1.2838291 ◽

2008 ◽

Vol 103 (7) ◽

pp. 07A908 ◽

Cited By ~ 2

Author(s):

J. Okabayashi ◽

M. Watanabe ◽

T. Yamaguchi ◽

J. Yoshino

Keyword(s):

Bias Voltage ◽

Tunnel Junctions ◽

Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.3673557 ◽

2012 ◽

Vol 100 (1) ◽

pp. 012401 ◽

Cited By ~ 15

Author(s):

Ruisheng Liu ◽

See-Hun Yang ◽

Xin Jiang ◽

Teya Topuria ◽

Philip M. Rice ◽

...

Keyword(s):

Tunnel Junctions ◽

Double Barrier ◽

Magnetoresistance Oscillations

Tunneling magnetoresistance in GaMnAs∕AlAs∕InGaAs∕AlAs∕GaMnAs double-barrier magnetic tunnel junctions

Applied Physics Letters ◽

10.1063/1.1978976 ◽

2005 ◽

Vol 87 (1) ◽

pp. 012105 ◽

Cited By ~ 31

Author(s):

Shinobu Ohya ◽

Pham Nam Hai ◽

Masaaki Tanaka

Keyword(s):

Tunnel Junctions ◽

Tunneling magnetoresistance of double-barrier magnetic tunnel junctions in sequential and coherent regimes

Physical Review B ◽

10.1103/physrevb.73.014432 ◽

2006 ◽

Vol 73 (1) ◽

Cited By ~ 9

Author(s):

Zhi Ping Niu ◽

Zhi Bo Feng ◽

Jun Yang ◽

D. Y. Xing

Keyword(s):

Tunnel Junctions ◽

Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/5.0051905 ◽

2021 ◽

Vol 130 (3) ◽

pp. 033901

Author(s):

Dhritiman Bhattacharya ◽

Peng Sheng ◽

Md Ahsanul Abeed ◽

Zhengyang Zhao ◽

Hongshi Li ◽

...

Keyword(s):

Acoustic Wave ◽

Surface Acoustic Wave ◽

Tunnel Junctions ◽

Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004795 ◽

2007 ◽

Vol 17 (03) ◽

pp. 593-598 ◽

Cited By ~ 1

Author(s):

N. N. BELETSKII ◽

S. A. BORYSENKO ◽

V. M. YAKOVENKO ◽

G. P. BERMAN ◽

S. A. WOLF

Keyword(s):

Current Density ◽

Tunnel Junctions ◽

Electron Current ◽

Ferromagnetic Electrode ◽

Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.