Efficient carrier transport for 368 nm ultraviolet LEDs with p-AlInGaN/AlGaN short-period superlattice electron blocking layer

2021 ◽  
Author(s):  
Longfei He ◽  
Kang Zhang ◽  
Hualong Wu ◽  
Chenguang He ◽  
Wei Zhao ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Carrier Transport ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Short Period ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum barrier (LQB)/EBL interface, the polarization-induced...

scholarly journals Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes

2018 ◽  
Vol 8 (12) ◽  
pp. 2402 ◽  
Author(s):  
Shuxin Tan ◽  
Jicai Zhang ◽  
Takashi Egawa ◽  
Gang Chen
Keyword(s):  
Quantum Well ◽  
Ultraviolet Light ◽  
Output Power ◽  
Blocking Layer ◽  
Electron Current ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

The influence of quantum-well (QW) number on electroluminescence properties was investigated and compared with that of AlN electron blocking layer (EBL) for deep ultraviolet light-emitting diodes (DUV-LEDs). By increasing the QW number, the band emission around 265 nm increased and the parasitic peak around 304 nm was suppressed. From the theoretical calculation, the electron current overflowing to the p-type layer was decreased as the QW number increased under the same injection. Correspondingly, the light output power also increased. The increment of output power from 5 QWs to 10 QWs was less than that from 10 QWs to 40 QWs, which was very different from what has been reported for blue and near-UV LEDs. The parasitic peak was still observed even when the QW number increased to 40. However, it can be suppressed efficiently by 1 nm AlN EBL for LEDs with 5 QWs. The simulation showed that the insertion of a thin EBL increased the barrier height for electron overflow and the electron current in p-type layers decreased significantly. The results contributed to the understanding of behavior of electron overflow in DUV-LEDs.

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