Study of the formation mechanism of complex oxides obtained by the sol–gel method: influence of the structure of iron, aluminium and yttrium acetylacetonate precursors on the phase composition of the ZrO2ceramics

1996 ◽  
Vol 6 (2) ◽  
pp. 207-212 ◽  
Author(s):  
O. G. Ellert ◽  
I. A. Petrunenko ◽  
M. V. Tsodikov ◽  
O. V. Bukhtenko ◽  
D. I. Kochubey ◽  
...  
Keyword(s):  
Phase Composition ◽  
Formation Mechanism ◽  
Sol Gel ◽  
Complex Oxides ◽  
Gel Method ◽  
Sol Gel Method

The Preparation and Properties of (Na0.5+xK0.5-2xLix)NbO3 Lead-Free Piezoelectric Ceramics

2014 ◽  
Vol 602-603 ◽  
pp. 826-829
Author(s):  
Hong Yun Ma ◽  
Yan Gai Liu ◽  
Jin Qiu Zhao ◽  
Zhao Hui Huang ◽  
Ming Hao Fang
Keyword(s):  
Phase Composition ◽  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Piezoelectric Ceramics ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Pressureless Sintering ◽  
Gel Method ◽  
Sol Gel Method

In this paper, the KNN powders with Li+ substituted (K0.5Na0.5)+ were prepared by the sol-gel method in order to make powders pure, (Na0.50+xK0.50-2xLix) -NbO3 (x=0, 0.04, 0.06, 0.08) ceramics were prepared by pressureless sintering. The phase composition of powders was determined by XRD. The effects of the Li+ substitution on piezoelectric and ferroelectric properties of ceramics were systematically studied for determining optimal Li+ content. Li+ can significantly increase the piezoelectric constant of ceramic. When Li+ content was 0.04, piezoelectric properties of ceramics were the best, d33=115 pC/N, Pr=6.35 μC/cm2, Ec=14.24 kV/cm.

Influence of the nature of iron, aluminium and yttrium organometallic nanocluster precursors on the formation mechanism of ceramic ZrO2 obtained by sol-gel method

1997 ◽  
Vol 8 (1-3) ◽  
pp. 213-221 ◽  
Author(s):  
O. G. Ellert ◽  
I. A. Petrunenko ◽  
M. V. Tsodikov ◽  
O. V. Bukhtenko ◽  
D. I. Kochubey ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Preparation and Properties of Ni-Si-O Thin Film Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 799-801
Author(s):  
Rong Juan Zhao ◽  
Yuan Hua Lin ◽  
Jing Nan Cai ◽  
Ce Wen Nan ◽  
Dan Xie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Dielectric Properties ◽  
Electrical Property ◽  
Electric Field ◽  
Sol Gel ◽  
Si Substrate ◽  
Gel Method ◽  
Sol Gel Method

Ni-Si-O thin films on Si substrate have been prepared by a sol-gel method. The microstructure and phase composition of the films were investigated by XRD, SEM, FTIR. The XRD results showed that the films are amorphous while annealed at 800oC for 10 min, the SEM imagines proved that the films are smooth and thickness is about 190 nm. Electrical property of the film indicated that the leakage current was as low as 10-6A/cm2 at an electric field of 1MV/cm. The dielectric properties of Ni-Si-O thin films can be improved as increasing the annealed temperature.

CO hydrogenation over nanometer spinel-type Co/Mn complex oxides prepared by sol-gel method

1998 ◽  
Vol 166 (1) ◽  
pp. 191-199 ◽  
Author(s):  
Qi Liang ◽  
Kaidong Chen ◽  
Wenhua Hou ◽  
Qijie Yan
Keyword(s):  
Co Hydrogenation ◽  
Sol Gel ◽  
Complex Oxides ◽  
Spinel Type ◽  
Gel Method ◽  
Sol Gel Method
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