In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al

2001 ◽  
Vol 203 (1) ◽  
pp. 17-21 ◽  
Author(s):  
S. Tsukimoto ◽  
S. Arai ◽  
M. Konno ◽  
T. Kamino ◽  
K. Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Electron Energy Loss ◽  
Spectroscopy Observation

Nanoscale analysis of a Co-SrTiO3 interface in a Magnetic tunnel junction

2002 ◽  
Vol 746 ◽  
Author(s):  
J.-L. Maurice ◽  
F. Pailloux ◽  
D. Imhoff ◽  
J.-P. Contour ◽  
A. Barthélémy ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Tunnel Junction ◽  
Electron Energy Loss Spectroscopy ◽  
Magnetic Tunnel Junction ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Electron Energy Loss

ABSTRACTWe use High Resolution Electron Microscopy together with Electron Energy Loss Spectroscopy to analyze the crystallography and the chemical configuration of a Co/SrTiO3 interface in a Co/SrTiO3/La2/3Sr1/3MnO3 magnetic tunnel junction.PACS: 75.47.-m, 75.70.Cn, 68.37.Lp, 79.20.Uv

Quantification of CeO2 Reduction By In Situ Electron Energy-Loss Spectroscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 12-13
Author(s):  
Renu Sharma ◽  
Peter Crozier
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Mixed Oxides ◽  
High Resolution Electron Microscopy ◽  
Reduction Behavior ◽  
Oxidation Reduction ◽  
Resolution Electron ◽  
Electron Energy Loss

CeO2 is an important material in many catalyst applications. CeO2, PrO2 and TbO2 are the only lanthanides known to exist as oxides in both 3+ and 4+ oxidation states. The high oxygen mobility at low temperature (≈300°C) results in easy oxidation-reduction cycles; a property utilized in the catalyst industry, especially for CeO2. Studying the oxidation-reduction behavior is thus very important to understanding the reactivity of CeO2 as a catalyst. We have studied CeO2 by in situ electron diffraction, high resolution electron microscopy (HREM) and electron energy-loss spectroscopy (EELS), not only to understand the reduction behavior but also to develop a method to quantify the reducibility of CeO2 or mixed oxides containing CeO2 by EELS. We have applied this method to study the behavior of ZrO2-CeO2 catalyst during reduction.Experiments were performed on a PHILIPS-430 electron microscope operated at 300KV, fitted with a differentially pumped environmental cell and a Gatan Imaging Filter (GIF).

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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