Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

1990 ◽  
Vol 26 (16) ◽  
pp. 1324
Author(s):  
I. Pollentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Strained Layer ◽  
Gaas Mesfet ◽  
Lift Off

Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

1990 ◽  
Vol 26 (13) ◽  
pp. 925 ◽  
Author(s):  
I. Polentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Strained Layer ◽  
Gaas Mesfet ◽  
Lift Off

VIA-7 planar monolithic integration of a photodiode and a GaAs MESFET preamplifier

1983 ◽  
Vol 30 (11) ◽  
pp. 1611-1611
Author(s):  
R.M. Kolbas ◽  
J. Abrokwah ◽  
J.K. Carney
Keyword(s):  
Monolithic Integration ◽  
Gaas Mesfet

Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

1997 ◽  
Vol 44 (1) ◽  
pp. 11-16 ◽  
Author(s):  
R. Basco ◽  
A. Prabhu ◽  
S. Yngvesson ◽  
Kei May Lau
Keyword(s):  
Quartz Substrate ◽  
Monolithic Integration ◽  
Lift Off

DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

1990 ◽  
Vol 26 (22) ◽  
pp. 1865 ◽  
Author(s):  
D.M. Shah ◽  
W.K. Chan ◽  
T.J. Gmitter ◽  
L.T. Florez ◽  
H. Schumacher ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Gaas Mesfet ◽  
Lift Off ◽  
Rf Performance

Combined Tem and X-Ray Topographic Characterization of InxGa1−xAs/GaAs Strained Layer Systems.

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Dudley ◽  
Gong-Da Yao ◽  
David Paine ◽  
David Howard ◽  
Robert N. Sacks
Keyword(s):  
Interfacial Dislocation ◽  
X Ray ◽  
Strained Layer ◽  
Dislocation Densities ◽  
Wide Range ◽  
Lift Off ◽  
Depth Sensitivity ◽  
Non Destructive ◽  
Defect Densities

ABSTRACTNovel application of a combination of TEM and non-destructive synchrotron X-ray topography in both Bragg and grazing Bragg-Laue geometries to the characterization of InxGa1−xAs/GaAs strained layer films is reported. Specialized epilayer lift-off procedures enabled TEM characterization of the defect distributions in macroscopic area films, effectively increasing the field of view of the technique by several orders of magnitude. These lateral distributions correlated well with those observed on both Bragg and grazing Bragg- Laue topographs. Grazing Bragg-Laue images also afforded depth sensitivity. Excellent correlations exist between results obtained with all these techniques for systems with a wide range of In concentrations, corresponding to a broad range of interfacial dislocation densities, although only results for x=;0.085 are presented. This work demonstrates that it is possible to bridge the gap that has traditionally existed between the areas of application of these two generic techniques, in terms of both tolerable defect densities and fields of view. This gap also spans the range of defect densities which is of interest in this and other systems.

scholarly journals Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

2015 ◽  
Vol 62 (12) ◽  
pp. 4069-4075 ◽  
Author(s):  
Chengzhi Xie ◽  
Vincenzo Pusino ◽  
Ata Khalid ◽  
Matthew J. Steer ◽  
Marc Sorel ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Mid Infrared ◽  
Gaas Mesfet

Monolithic integration of InAs photodiode and GaAs MESFET

1992 ◽  
Vol 28 (4) ◽  
pp. 372 ◽  
Author(s):  
W. Dobbelaere ◽  
W. de Raedt ◽  
J. de Boeck ◽  
R. Mertens ◽  
G. Borghs
Keyword(s):  
Monolithic Integration ◽  
Gaas Mesfet
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