Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition

2000 ◽  
Vol 36 (12) ◽  
pp. 1026 ◽  
Author(s):  
Chong-Yi Lee ◽  
Meng-Chyi Wu ◽  
Ya-De Tian ◽  
Wei-Han Wang ◽  
Wen-Jeng Ho ◽  
...  
1991 ◽  
Vol 69 (3-4) ◽  
pp. 353-356
Author(s):  
C. Aktik ◽  
J. F. Currie ◽  
F. Bosse ◽  
R. W. Cochrane ◽  
J. Auclair

Si-doped GaAs epitaxial layers grown by metal-organic chemical vapour deposition exhibit substantial carrier density loss after rapid thermal annealing (RTA) at temperatures higher than 850 °C. Hall-effect, capacitance–voltage, deep-level transient spectroscopy, and secondary ion mass spectroscopy measurements were performed on samples before and after RTA. We show that the reduction of free-carrier concentration in the entire thickness of the epitaxial layer is accompanied by the deterioration of the mobility and the enhancement of donor-like deep-level concentration at 0.305 eV below the conduction band, which is in good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.


1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton

Sign in / Sign up

Export Citation Format

Share Document