Defect absorption in selenium films by photothermal deflection spectroscopy

2020 ◽  
Vol 89 (1) ◽  
pp. 10301
Author(s):  
Tamihiro Gotoh

Sub-gap absorption spectra of selenium films are investigated by photothermal deflection spectroscopy. The selenium films are prepared by vacuum evaporation of selenium pellets. Raman spectroscopy reveals that as-deposited films are amorphous, and the films annealed at 100 °C are trigonal crystal. Photothermal deflection spectroscopy is extended to infrared light of 0.31 eV with maintaining high sensitivity, and detects weak absorption at energies below the band gap. Five absorption peaks and tail absorption are observed in selenium films, and the absorption peak energies are 1.32, 1.08, 0.47, 0.41 and 0.34 eV, respectively. These absorption tail and peaks are derived from selenium, and the origin of these absorptions is explained based on the oxygen impurity and the defect structure of the selenium film.

2021 ◽  
Author(s):  
Yuyang Gu ◽  
Zhiyong Guo ◽  
Wei Yuan ◽  
Mengya Kong ◽  
Yulai Liu ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.


2008 ◽  
Vol 103 (9) ◽  
pp. 094906 ◽  
Author(s):  
Adam R. Krause ◽  
Charles Van Neste ◽  
Larry Senesac ◽  
Thomas Thundat ◽  
Eric Finot

1991 ◽  
pp. 269-272
Author(s):  
J. Serra ◽  
J. Andreu ◽  
G. Sardin ◽  
C. Roch ◽  
J.M. Asensi ◽  
...  

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Q. Gu ◽  
J. M. Viner ◽  
P. C. Taylor ◽  
M. J. Williams ◽  
W. A. Turner ◽  
...  

ABSTRACTPhotoluminescence (PL) has been investigated in hydrogenated microcrystalline silicon (μc-Si:H) samples as a function of boron doping for films prepared by remote plasma enhanced chemical vapor deposition. When the dark conductivity a is below about 10-5 S/cm, the PL spectra exhibit a shape which is close to that of the so-called band tail PL in undoped hydrogenated amorphous silicon (a-Si:H) at 77 K. When a increases, the PL intensity decreases at 77 K. For samples with a on the order of 10-3 S/cm, the PL spectra show only a narrow, low energy PL band which peaks around 0.8–0.9 eV. In these samples, the PL at higher energy is essentially not observable. This trend is similar to that which occurs in doped a-Si:H. However, for higher doping levels (σ ∼ 1 S/cm) the PL in μc-Si:H, although very weak, exhibits a broad band which contains intensity at higher energies. The absorption spectra in these samples, as measured by photothermal deflection spectroscopy (PDS), show the same relationships with the corresponding PL spectra as do the PDS spectra in doped a-Si:H.


Sign in / Sign up

Export Citation Format

Share Document