Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation

ITM Web of Conferences ◽

10.1051/itmconf/20193010005 ◽

2019 ◽

Vol 30 ◽

pp. 10005

Author(s):

Dmitry Gromov ◽

Vadim Elesin

Keyword(s):

Radiation Effects ◽

High Electron Mobility Transistors ◽

Microwave Devices ◽

High Electron ◽

Parameter Recovery ◽

Resonant Tunnelling ◽

Electron Mobility Transistors ◽

Effect Transistor ◽

Technology Processes

The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

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Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates

Chinese Physics Letters ◽

10.1088/0256-307x/23/3/048 ◽

2006 ◽

Vol 23 (3) ◽

pp. 697-700 ◽

Author(s):

Huang Ying-Long ◽

Ma Long ◽

Yang Fu-Hua ◽

Wang Liang-Chen ◽

Zeng Yi-Ping

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Resonant Tunnelling ◽

Electron Mobility Transistors ◽

Gaas Substrates

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Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1987.4337560 ◽

1987 ◽

Vol 34 (6) ◽

pp. 1808-1811 ◽

Author(s):

Michael J. O'Loughlin

Keyword(s):

Gamma Irradiation ◽

Electron Mobility ◽

Radiation Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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FACTORS LIMITING THE MAXIMUM OPERATING VOLTAGE OF MICROWAVE DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156400000155 ◽

2000 ◽

Vol 10 (01) ◽

pp. 119-128

Author(s):

ENRICO ZANONI ◽

GAUDENZIO MENEGHESSO ◽

ALDO DI CARLO ◽

PAOLO LUGLI ◽

LORENZO ROSSI

Keyword(s):

Impact Ionization ◽

High Electron Mobility Transistors ◽

Microwave Devices ◽

Operating Voltage ◽

High Electron ◽

Hot Carriers ◽

Hot Carrier ◽

Electron Mobility Transistors ◽

State Breakdown ◽

Pulsed Measurements

The operating voltage of advanced microwave devices is currently limited by impact-ionization and breakdown effects. An extended study of the effects of hot carriers on the breakdown behavior and reliability of GaAs-based and InP-based HEMTs (high electron mobility transistors) has been carried out by means of pulsed measurements, electroluminescence spectroscopy and microscopy and Monte Carlo simulations. We show that the parasitic bipolar effect, which explains kink effects in HEMTs, can also induce regenerative phenomena eventually leading to on-state breakdown. Results concerning the effects of hot carrier aging on GaAs-based and InP-based HEMTs are summarized.

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Radiation effects in high-electron-mobility transistors

Technical Physics Letters ◽

10.1134/1.1262465 ◽

1999 ◽

Vol 25 (4) ◽

pp. 317-318 ◽

Author(s):

A. E. Rengevich

Keyword(s):

Electron Mobility ◽

Radiation Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

IEEE Transactions on Electron Devices ◽

10.1109/16.556145 ◽

1997 ◽

Vol 44 (3) ◽

pp. 364-372 ◽

Author(s):

M. Papastamatiou ◽

N. Arpatzanis ◽

G.J. Papaioannou ◽

C. Papastergiou ◽

A. Christou

Keyword(s):

Electron Mobility ◽

Radiation Effects ◽

Neutron Radiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Neutron Radiation Effects

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He ion radiation effects in high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.360058 ◽

1995 ◽

Vol 78 (5) ◽

pp. 3066-3076 ◽

Author(s):

G. J. Papaioannou ◽

M. J. Papastamatiou ◽

A. Christou

Keyword(s):

Electron Mobility ◽

Radiation Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Ion Radiation Effects

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Radiation Effects in GaN-Based High Electron Mobility Transistors

JOM ◽

10.1007/s11837-015-1359-y ◽

2015 ◽

Vol 67 (7) ◽

pp. 1601-1611 ◽

Author(s):

S. J. Pearton ◽

Ya-Shi Hwang ◽

F. Ren

Keyword(s):

Electron Mobility ◽

Radiation Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Low-Noise Microwave Devices: AlGaN/GaN High Electron Mobility Transistors and Oscillators

2007 International Kharkiv Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW) ◽

10.1109/msmw.2007.4294574 ◽

2007 ◽

Author(s):

S.A. Vitusevich

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Noise ◽

Microwave Devices ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Journal of Electronic Materials ◽

10.1007/s11664-006-0036-x ◽

2007 ◽

Vol 36 (4) ◽

pp. 379-383 ◽

Author(s):

Rohit Khanna ◽

L. Stafford ◽

S.J. Pearton ◽

T.J. Anderson ◽

F. Ren ◽

...

Keyword(s):

Thermal Stability ◽

Electron Mobility ◽

Ohmic Contacts ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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The gamma ray radiation effects in high-electron-mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/11/003 ◽

1995 ◽

Vol 10 (11) ◽

pp. 1445-1451 ◽

Author(s):

N Arpatzanis ◽

M Papastamatiou ◽

G J Papaioannou ◽

Z Hatzopoulos ◽

G Konstandinides

Keyword(s):

Electron Mobility ◽

Radiation Effects ◽

Gamma Ray ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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