scholarly journals CONVECTION AND CHEMISTRY EFFECTS IN CVD - A 3-D ANALYSIS FOR SILICON DEPOSITION

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-17-C5-34 ◽  
Author(s):  
S. A. GOKOGLU ◽  
M. KUCZMARSKI ◽  
P. TSUI ◽  
A. CHAIT
Keyword(s):  
Silicon Deposition

2D and 1D modeling of AMT barrel reactors for silicon deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-273-Pr8-280
Author(s):  
M. Masi ◽  
C. Cavallotti ◽  
S. Carrà ◽  
D. Crippa ◽  
G. Vaccari
Keyword(s):  
Silicon Deposition ◽  
1D Modeling

Modelling of a new parallel-flow CVD reactor for low pressure silicon deposition

1992 ◽  
Vol 47 (9-11) ◽  
pp. 2921-2926 ◽  
Author(s):  
S. Bismo ◽  
P. Duverneuil ◽  
L. Pibouleau ◽  
S. Domenech ◽  
J.P. Couderc
Keyword(s):  
Low Pressure ◽  
Parallel Flow ◽  
Silicon Deposition

scholarly journals SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-63-C2-70 ◽  
Author(s):  
M. GUEYE ◽  
E. SCHEID ◽  
P. TAURINES ◽  
P. DUVERNEUIL ◽  
D. BIELLE-DASPET ◽  
...  
Keyword(s):  
Experimental Study ◽  
Silicon Deposition

scholarly journals Silicon Deposition on a Rotating Disk

1980 ◽  
Vol 127 (3) ◽  
pp. 744-752 ◽  
Author(s):  
Richard Pollard ◽  
John Newman
Keyword(s):  
Rotating Disk ◽  
Silicon Deposition

Silicon Deposition on 3C-SiC Seeds of Different Orientations

2017 ◽  
Vol 897 ◽  
pp. 87-90 ◽  
Author(s):  
Taguhi Yeghoyan ◽  
Kassem Alassaad ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Deposition Temperature ◽  
Silicon Substrates ◽  
Silicon Deposition ◽  
Full Coverage ◽  
High Deposition Temperature ◽  
Almost All

Silicon deposition on 3C-SiC seeds was studied as a function of seed orientations and thicknesses. The 3C-SiC seeds were grown on silicon substrates of (100), (110), (111) and (211) orientations by standard two-step CVD (low temperature carbonization followed by high temperature epitaxy). Then, the Si layers were grown onto these SiC seeds at various temperatures. Almost all the conditions gave polycrystalline deposit. At high deposition temperature (1350°C) the Si deposit was composed of separated hillocks and was never fully covering the 3C-SiC seeds. Lower deposition temperatures (≤ 1100°C) allowed obtaining silicon full coverage but not full epitaxy. Focusing on (100) orientation, it was shown that (100) Si deposit could be obtained but only on the as carbonized 3C-SiC sample, i.e. with the thinner SiC layer.

Sign in / Sign up

Export Citation Format

Share Document