Non-Equilibrium behavior of dopants during epitaxial silicon deposition using silane

1972 ◽  
Vol 1 (3) ◽  
pp. 371-380 ◽  
Author(s):  
Dinesh C. Gupta
Keyword(s):  
Epitaxial Silicon ◽  
Silicon Deposition ◽  
Equilibrium Behavior ◽  
Non Equilibrium

Non-equilibrium behavior of small carbohydrate-water systems

1988 ◽  
Vol 60 (12) ◽  
pp. 1841-1864 ◽  
Author(s):  
L. Slade ◽  
Harry Levine
Keyword(s):  
Water Systems ◽  
Equilibrium Behavior ◽  
Non Equilibrium

Electron Spin Resonance Studies of Amorphous Silicon

1980 ◽  
Vol 3 ◽  
Author(s):  
David K. Biegelsen
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Amorphous Semiconductor ◽  
Experimental Techniques ◽  
Equilibrium Behavior ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Simple Picture ◽  
Non Equilibrium

ABSTRACTElectron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.

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