Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers

1990 ◽  
Vol 57 (22) ◽  
pp. 2291-2293 ◽  
Author(s):  
S. H. Hagen ◽  
A. Valster ◽  
M. J. B. Boermans ◽  
J. van der Heyden
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure

Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers

2005 ◽  
Author(s):  
S.H. Hagen ◽  
A. Valster ◽  
M.J.B. Boermans ◽  
J. van der Heyden ◽  
G. Acket
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Temperature dependence of threshold current density Jth and differential efficiency ηd of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers

1995 ◽  
Vol 66 (3) ◽  
pp. 253-255 ◽  
Author(s):  
H. J. Yi ◽  
J. Diaz ◽  
I. Eliashevich ◽  
M. Stanton ◽  
M. Erdtmann ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
High Power ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Differential Efficiency

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

2012 ◽  
Vol 46 (9) ◽  
pp. 1211-1215 ◽  
Author(s):  
I. S. Shashkin ◽  
D. A. Vinokurov ◽  
A. V. Lyutetskiy ◽  
D. N. Nikolaev ◽  
N. A. Pikhtin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density

Temperature Dependence of Laser Threshold Current Density and Emission Spectra in Electron-Beam Pumped Gallium Arsenide Lasers

1968 ◽  
Vol 29 (2) ◽  
pp. 715-723 ◽  
Author(s):  
O. V. Bogdankevich ◽  
N. A. Borisov ◽  
I. V. Krukova ◽  
B. M. Lavrushin
Keyword(s):  
Gallium Arsenide ◽  
Electron Beam ◽  
Temperature Dependence ◽  
Current Density ◽  
Emission Spectra ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Laser Threshold

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

2010 ◽  
Vol 44 (10) ◽  
pp. 1370-1374 ◽  
Author(s):  
M. A. Ladugin ◽  
A. V. Lyutetskiy ◽  
A. A. Marmalyuk ◽  
A. A. Padalitsa ◽  
N. A. Pikhtin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Quantum Efficiency ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density

Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

1987 ◽  
Vol 23 (17) ◽  
pp. 894 ◽  
Author(s):  
K. Nakano ◽  
M. Ikeda ◽  
A. Toda ◽  
C. Kojima
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Low Threshold
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