InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 57 (19) ◽  
pp. 1998-2000 ◽  
Author(s):  
R. P. Schneider ◽  
B. W. Wessels
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Single Quantum

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 393-396
Author(s):  
Guangxu Ju ◽  
Yoshihiro Kato ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Atomic Layer ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
X Ray

In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

2014 ◽  
Vol 115 (9) ◽  
pp. 094906 ◽  
Author(s):  
Guangxu Ju ◽  
Yoshio Honda ◽  
Masao Tabuchi ◽  
Yoshikazu Takeda ◽  
Hiroshi Amano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Organic Vapor ◽  
Metal Organic
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