Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy
1998 ◽
Vol 192
(1-2)
◽
pp. 47-55
◽
Keyword(s):
Keyword(s):
2010 ◽
Vol 208
(2)
◽
pp. 445-448
◽
Keyword(s):
1994 ◽
Vol 139
(3-4)
◽
pp. 344-350
◽
Keyword(s):
1997 ◽
Vol 48
(3)
◽
pp. 205-210
◽
Keyword(s):
1994 ◽
Vol 143
(3-4)
◽
pp. 124-128
◽