Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature

1991 ◽  
Vol 58 (20) ◽  
pp. 2255-2257 ◽  
Author(s):  
R. M. Kapre ◽  
A. Madhukar ◽  
S. Guha
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
High Peak ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities ◽  
Highly Strained

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

2018 ◽  
Vol 112 (10) ◽  
pp. 103101 ◽  
Author(s):  
Jimy Encomendero ◽  
Rusen Yan ◽  
Amit Verma ◽  
S. M. Islam ◽  
Vladimir Protasenko ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities

The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105A cm−2

1991 ◽  
Vol 69 (5) ◽  
pp. 3345-3350 ◽  
Author(s):  
E. Wolak ◽  
E. Özbay ◽  
B. G. Park ◽  
S. K. Diamond ◽  
David M. Bloom ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

2002 ◽  
Vol 81 (3) ◽  
pp. 499-501 ◽  
Author(s):  
A. I. Yakimov ◽  
A. S. Derjabin ◽  
L. V. Sokolov ◽  
O. P. Pchelyakov ◽  
A. V. Dvurechenskii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes
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