Electrical properties of heavily Si‐doped (311)AGaAs grown by molecular beam epitaxy

1994 ◽  
Vol 65 (9) ◽  
pp. 1171-1173 ◽  
Author(s):  
K. Agawa ◽  
K. Hirakawa ◽  
N. Sakamoto ◽  
Y. Hashimoto ◽  
T. Ikoma
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doped

Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 1, No. 8) ◽  
pp. 3346-3353 ◽  
Author(s):  
Teiji Yamamoto ◽  
Makoto Inai ◽  
Akinori Shinoda ◽  
Toshihiko Takebe ◽  
Toshihide Watanabe
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Crystal Structures ◽  
Molecular Beam ◽  
Si Doped

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

1996 ◽  
Vol 11 (1) ◽  
pp. L125-L128 ◽  
Author(s):  
K Shinohara ◽  
T Motokawa ◽  
K Kasahara ◽  
S Shimomura ◽  
N Sano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Si Doped

Nanoscale Study of the Influence of Atomic Oxygen on the Electrical Properties of LaAlO3 Thin High-k Oxide Films Deposited by Molecular Beam Epitaxy

2009 ◽  
Author(s):  
Wael Hourani ◽  
Liviu Militaru ◽  
Brice Gautier ◽  
David Albertini ◽  
Armel Descamps-Mandine ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Molecular Beam ◽  
Oxide Films ◽  
High K

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films
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