Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

Yoshinao Kumagai; Ryosuke Mori; Kouichi Ishimoto; Kyung-ho Park;  FumioHasegawa

doi:10.1143/jjap.34.4593

Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4593 ◽

1995 ◽

Vol 34 (Part 1, No. 9A) ◽

pp. 4593-4598 ◽

Cited By ~ 4

Author(s):

Yoshinao Kumagai ◽

Ryosuke Mori ◽

Kouichi Ishimoto ◽

Kyung-ho Park ◽

FumioHasegawa

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Surface Segregation ◽

Growth Temperature Dependence

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Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.051201 ◽

2015 ◽

Vol 54 (5) ◽

pp. 051201

Author(s):

Ri Guo Jin ◽

Shuhei Yagi ◽

Yasuto Hijikata ◽

Hiroyuki Yaguchi

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Surface Segregation ◽

Growth Temperature Dependence

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A study of the kinetic rate equation model for simulations of molecular beam epitaxy crystal growth: temperature dependence of surface kinetic processes

Semiconductor Science and Technology ◽

10.1088/0268-1242/13/11/003 ◽

1998 ◽

Vol 13 (11) ◽

pp. 1247-1257 ◽

Cited By ~ 3

Author(s):

D Papajová ◽

H Sitter

Keyword(s):

Crystal Growth ◽

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Rate Equation ◽

Growth Temperature ◽

Molecular Beam ◽

Equation Model ◽

Kinetic Rate ◽

Rate Equation Model ◽

Growth Temperature Dependence

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Growth temperature dependence and study of multilayer self-assembled GaInNAs/GaAsN quantum dots grown by solid source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.07.030 ◽

2004 ◽

Vol 271 (1-2) ◽

pp. 8-12 ◽

Cited By ~ 7

Author(s):

K.C. Yew ◽

S.F. Yoon ◽

Z.Z. Sun

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Self Assembled ◽

Growth Temperature Dependence

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Significant growth-temperature dependence of ferromagnetic properties for Co2FeSi/Si(111) prepared by low-temperature molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.3330895 ◽

2010 ◽

Vol 96 (8) ◽

pp. 082511 ◽

Cited By ~ 57

Author(s):

S. Yamada ◽

K. Hamaya ◽

K. Yamamoto ◽

T. Murakami ◽

K. Mibu ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Ferromagnetic Properties ◽

Significant Growth ◽

Growth Temperature Dependence

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Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:19870005 ◽

1987 ◽

Vol 23 (1) ◽

pp. 7-8 ◽

Cited By ~ 11

Author(s):

Y.C. Chou ◽

C.T. Lee ◽

C.D. Chen ◽

K.C. Chu

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Low Noise ◽

Growth Temperature Dependence

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Growth temperature dependence in molecular beam epitaxy of gallium arsenide

Journal of Crystal Growth ◽

10.1016/0022-0248(78)90453-0 ◽

1978 ◽

Vol 45 ◽

pp. 302-308 ◽

Cited By ~ 95

Author(s):

T. Murotani ◽

T. Shimanoe ◽

S. Mitsui

Keyword(s):

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Growth Temperature Dependence

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Growth Temperature Dependence of SrTiO3Thin Films by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.677 ◽

2005 ◽

Vol 44 (1B) ◽

pp. 677-680 ◽

Cited By ~ 3

Author(s):

Md. Nurul Kabir Bhuiyan ◽

Hiroaki Kimura ◽

Toyokazu Tambo ◽

Chiei Tatsuyama

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Growth Temperature ◽

Molecular Beam ◽

Growth Temperature Dependence

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Growth Temperature Dependence of Electrical Properties of LPE-Al0.1Ga0.9Sb Characterized by p-n Junction Current Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.1009 ◽

1990 ◽

Vol 29 (Part 1, No. 6) ◽

pp. 1009-1013 ◽

Cited By ~ 5

Author(s):

Noboru Kitamura ◽

Yoshikazu Takeda ◽

Akio Sasaki

Keyword(s):

Electrical Properties ◽

Temperature Dependence ◽

Growth Temperature ◽

Current Transport ◽

Growth Temperature Dependence

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Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.348566 ◽

1991 ◽

Vol 69 (5) ◽

pp. 3058-3062 ◽

Cited By ~ 86

Author(s):

Kiyokazu Nakagawa ◽

Masanobu Miyao

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Molecular Beam ◽

Surface Segregation

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Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2014.02.002 ◽

2014 ◽

Vol 392 ◽

pp. 30-33 ◽

Cited By ~ 58

Author(s):

Kohei Sasaki ◽

Masataka Higashiwaki ◽

Akito Kuramata ◽

Takekazu Masui ◽

Shigenobu Yamakoshi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Growth Temperature ◽

Molecular Beam ◽

Epitaxial Films ◽

Structural And Electrical Properties ◽

Temperature Dependences

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