Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy

1984 ◽  
Vol 13 (2) ◽  
pp. 281-308 ◽  
Author(s):  
H. Künzel ◽  
K. Ploog ◽  
K. Wünstel ◽  
B. L. Zhou
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Si Doped

Electrical properties of heavily Si‐doped (311)AGaAs grown by molecular beam epitaxy

1994 ◽  
Vol 65 (9) ◽  
pp. 1171-1173 ◽  
Author(s):  
K. Agawa ◽  
K. Hirakawa ◽  
N. Sakamoto ◽  
Y. Hashimoto ◽  
T. Ikoma
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doped

scholarly journals A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in InxGa1−x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 167-173
Author(s):  
M. L. O’Steen ◽  
F. Fedler ◽  
R. J. Hauenstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Flux Ratio ◽  
Rf Plasma ◽  
Thermally Activated ◽  
Luminescence Efficiency ◽  
Order Of Magnitude ◽  
Incorporation Efficiency

Laterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in InxGa1−xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of InxGa1−xN/GaN superlattices has been found to depend systematically upon both substrate temperature (Tsub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of-magnitude decrease in average alloy composition) is observed over a narrow temperature range (590–670°C), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high Tsub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing Tsub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

Misorientation Dependence of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 1, No. 8) ◽  
pp. 3346-3353 ◽  
Author(s):  
Teiji Yamamoto ◽  
Makoto Inai ◽  
Akinori Shinoda ◽  
Toshihiko Takebe ◽  
Toshihide Watanabe
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Crystal Structures ◽  
Molecular Beam ◽  
Si Doped

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

1996 ◽  
Vol 11 (1) ◽  
pp. L125-L128 ◽  
Author(s):  
K Shinohara ◽  
T Motokawa ◽  
K Kasahara ◽  
S Shimomura ◽  
N Sano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Si Doped

A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in inxGa1−x/GaN Heterostructures Grown by Rf Plasma-Assisted Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
M. L. O'Steen ◽  
F. Fedler ◽  
R. J. Hauenstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Flux Ratio ◽  
Rf Plasma ◽  
Thermally Activated ◽  
Luminescence Efficiency ◽  
Order Of Magnitude ◽  
Incorporation Efficiency

AbstractLaterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in InxGa1−xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of InxGa1−xN/GaN superlattices has been found to depend systematically upon both substrate temperature (Tsub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of-magnitude decrease in average alloy composition) is observed over a narrow temperature range (590–670oC), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high Tsub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing Tsub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

Nanoscale Study of the Influence of Atomic Oxygen on the Electrical Properties of LaAlO3 Thin High-k Oxide Films Deposited by Molecular Beam Epitaxy

2009 ◽  
Author(s):  
Wael Hourani ◽  
Liviu Militaru ◽  
Brice Gautier ◽  
David Albertini ◽  
Armel Descamps-Mandine ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Molecular Beam ◽  
Oxide Films ◽  
High K

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

2010 ◽  
Vol 312 (9) ◽  
pp. 1491-1495 ◽  
Author(s):  
Jie Zhao ◽  
Yiping Zeng ◽  
Chao Liu ◽  
Yanbo Li
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Molecular Beam
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