Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

1985 ◽  
Vol 46 (4) ◽  
pp. 377-379 ◽  
Author(s):  
H. Okumura ◽  
S. Misawa ◽  
S. Yoshida ◽  
S. Gonda
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1178-L1179 ◽  
Author(s):  
M. Drechsler ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
T. Detchprohm ◽  
H. Amano ◽  
...  
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Electron Effective Mass ◽  
Band Electron ◽  
Conduction Band Electron

Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique

2000 ◽  
Vol 77 (6) ◽  
pp. 776-778 ◽  
Author(s):  
J. Arias ◽  
I. Esquivias ◽  
E. C. Larkins ◽  
S. Bürkner ◽  
S. Weisser ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Capacitance Voltage
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