Significant reduction in the soft error susceptibility of GaAs field‐effect transistors with a low‐temperature grown GaAs buffer layer

1995 ◽  
Vol 67 (5) ◽  
pp. 703-705 ◽  
Author(s):  
Todd R. Weatherford ◽  
Dale McMorrow ◽  
Arthur B. Campbell ◽  
Walter R. Curtice
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Soft Error ◽  
Gaas Buffer Layer ◽  
Low Temperature Grown Gaas

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer

1995 ◽  
Vol 42 (6) ◽  
pp. 1837-1843 ◽  
Author(s):  
D. McMorrow ◽  
T.R. Weatherford ◽  
W.R. Curtice ◽  
A.R. Knudson ◽  
S. Buchner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Low Temperature Grown Gaas

Low-temperature sol–gel processed AlOx gate dielectric buffer layer for improved performance in pentacene-based OFETs

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28801-28808 ◽  
Author(s):  
Femi Igbari ◽  
Qi-Xun Shang ◽  
Yue-Min Xie ◽  
Xiu-Juan Zhang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Organic Field Effect Transistors ◽  
Gel Technique ◽  
Improved Performance

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.

Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

1996 ◽  
Vol 43 (3) ◽  
pp. 918-923 ◽  
Author(s):  
D. McMorrow ◽  
T.R. Weatherford ◽  
A.R. Knudson ◽  
S. Buchner ◽  
J.S. Melinger ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Charge Collection ◽  
Gaas Buffer Layer ◽  
Heterostructure Fets ◽  
Low Temperature Grown Gaas
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