Low-temperature sol–gel processed AlOx gate dielectric buffer layer for improved performance in pentacene-based OFETs

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28801-28808 ◽  
Author(s):  
Femi Igbari ◽  
Qi-Xun Shang ◽  
Yue-Min Xie ◽  
Xiu-Juan Zhang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Organic Field Effect Transistors ◽  
Gel Technique ◽  
Improved Performance

An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-k AlOx prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO2 gate dielectric was demonstrated.

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer

2011 ◽  
Vol 20 (1) ◽  
pp. 017304 ◽  
Author(s):  
Xiao-Chuan Deng ◽  
Bo Zhang ◽  
You-Run Zhang ◽  
Yi Wang ◽  
Zhao-Ji Li
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Improved Performance
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