p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
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P Type
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1996 ◽
Vol 159
(1-4)
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pp. 130-133
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2003 ◽
Vol 248
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pp. 503-506
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1994 ◽
Vol 138
(1-4)
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pp. 755-758
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1997 ◽
Vol 14
(8)
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pp. 637-640
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