Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy

Olivier Ostinelli; C. R. Bolognesi

doi:10.1143/apex.4.085501

Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.1143/apex.4.085501 ◽

2011 ◽

Vol 4 (8) ◽

pp. 085501 ◽

Cited By ~ 1

Author(s):

Olivier Ostinelli ◽

C. R. Bolognesi

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Dopant Source

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p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source

Applied Physics Letters ◽

10.1063/1.117130 ◽

1996 ◽

Vol 69 (25) ◽

pp. 3863-3865 ◽

Cited By ~ 9

Author(s):

H. Ehsani ◽

I. Bhat ◽

R. Gutmann ◽

G. Charache

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

P Type ◽

Dopant Source

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Use of dimethyl hydrazine as a new acceptor-dopant source in metalorganic vapor phase epitaxy of ZnSe

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90987-v ◽

1990 ◽

Vol 101 (1-4) ◽

pp. 305-310 ◽

Cited By ~ 10

Author(s):

A. Yoshikawa ◽

S. Matsumoto ◽

S. Yamaga ◽

H. Kasai

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Dopant ◽

Dopant Source

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Cited By ~ 9

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3462294 ◽

2010 ◽

Vol 97 (1) ◽

pp. 013502 ◽

Cited By ~ 21

Author(s):

Kuo-Hua Chang ◽

Jinn-Kong Sheu ◽

Ming-Lun Lee ◽

Shang-Ju Tu ◽

Chih-Ciao Yang ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Cited By ~ 3

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

High Power ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.124481 ◽

1999 ◽

Vol 75 (5) ◽

pp. 683-685 ◽

Cited By ~ 22

Author(s):

L. Li ◽

B.-K. Han ◽

D. Law ◽

C. H. Li ◽

Q. Fu ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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