Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
1998 ◽
Vol 31
(2)
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pp. 159-164
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2012 ◽
Vol 12
(8)
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pp. 6737-6740
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1995 ◽
Vol 13
(2)
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pp. 777
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1996 ◽
Vol 99
(10)
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pp. 713-716
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1999 ◽
Vol 14
(1)
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pp. 103-109
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2000 ◽
Vol 8
(4)
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pp. 297-305
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