Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

1999 ◽  
Vol 74 (13) ◽  
pp. 1851-1853 ◽  
Author(s):  
Y. S. Huang ◽  
W. D. Sun ◽  
L. Malikova ◽  
Fred H. Pollak ◽  
I. Ferguson ◽  
...  
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