Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Solid State Communications ◽

10.1016/0038-1098(96)00223-2 ◽

1996 ◽

Vol 99 (10) ◽

pp. 713-716 ◽

Cited By ~ 1

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Hyung-Sup Yoon ◽

Chul-Soon Park ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Photoluminescence Studies

Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence

Journal of Applied Physics ◽

10.1063/1.370823 ◽

1999 ◽

Vol 86 (2) ◽

pp. 914-917 ◽

Author(s):

Steven K. Brierley ◽

Abbas Torabi ◽

Peter S. Lyman

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Precise Determination ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Electron Mobility Transistors ◽

Channel Thickness

Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters ◽

10.1063/1.123690 ◽

1999 ◽

Vol 74 (13) ◽

pp. 1851-1853 ◽

Cited By ~ 5

Author(s):

Y. S. Huang ◽

W. D. Sun ◽

L. Malikova ◽

Fred H. Pollak ◽

I. Ferguson ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Room Temperature Photoluminescence

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

X Ray ◽

Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures

Solid-State Electronics ◽

10.1016/j.sse.2006.11.003 ◽

2007 ◽

Vol 51 (1) ◽

pp. 85-89 ◽

Cited By ~ 11

Author(s):

X.Z. Shang ◽

Jing Wu ◽

W.C. Wang ◽

W.X. Wang ◽

Q. Huang ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Room Temperature Photoluminescence

High Electron ◽

High Electron Mobility ◽

Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.4575 ◽

2012 ◽

Vol 12 (8) ◽

pp. 6737-6740 ◽

Cited By ~ 3

Author(s):

A. El Moutaouakil ◽

T. Suemitsu ◽

T. Otsuji ◽

D. Coquillat ◽

W. Knap

Keyword(s):

Terahertz Radiation ◽

Electron Mobility ◽

Room Temperature ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Material Systems

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

ECS Meeting Abstracts ◽

10.1149/ma2020-01312319mtgabs ◽

2020 ◽

Vol MA2020-01 (31) ◽

pp. 2319-2319

Author(s):

Zhixiang Hu ◽

Jingyao Liu ◽

Licheng Zhou ◽

Long Li ◽

Yunong Zhao ◽

...

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

Gas Detection ◽

High Electron ◽

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron ◽

Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(00)00165-x ◽

2000 ◽

Vol 8 (4) ◽

pp. 297-305 ◽

Author(s):

T.H. Chen ◽

Y.S. Huang ◽

T.S. Shou ◽

K.K. Tiong ◽

D.Y. Lin ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron ◽

Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

Journal of Applied Physics ◽

10.1063/1.373751 ◽

2000 ◽

Vol 88 (2) ◽

pp. 883-888 ◽

Cited By ~ 3

Author(s):

T. H. Chen ◽

Y. S. Huang ◽

D. Y. Lin ◽

Fred H. Pollak ◽

M. S. Goorsky ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Strain Relaxation ◽

High Electron ◽

Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems

35th International Conference on Infrared, Millimeter, and Terahertz Waves ◽

10.1109/icimw.2010.5612598 ◽

2010 ◽

Cited By ~ 5

Author(s):

A. El Moutaouakil ◽

T. Suemitsu ◽

T. Otsuji ◽

D. Coquillat ◽

W. Knap

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Terahertz Detection ◽

Material Systems