Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

Journal of Applied Physics ◽

10.1063/1.373751 ◽

2000 ◽

Vol 88 (2) ◽

pp. 883-888 ◽

Author(s):

T. H. Chen ◽

Y. S. Huang ◽

D. Y. Lin ◽

Fred H. Pollak ◽

M. S. Goorsky ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Strain Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(00)00165-x ◽

2000 ◽

Vol 8 (4) ◽

pp. 297-305 ◽

Author(s):

T.H. Chen ◽

Y.S. Huang ◽

T.S. Shou ◽

K.K. Tiong ◽

D.Y. Lin ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters ◽

10.1063/1.123690 ◽

1999 ◽

Vol 74 (13) ◽

pp. 1851-1853 ◽

Author(s):

Y. S. Huang ◽

W. D. Sun ◽

L. Malikova ◽

Fred H. Pollak ◽

I. Ferguson ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

X Ray ◽

Room Temperature Photoluminescence

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Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Journal of Applied Physics ◽

10.1063/1.370664 ◽

1999 ◽

Vol 85 (12) ◽

pp. 8235-8241 ◽

Author(s):

D. Y. Lin ◽

S. H. Liang ◽

Y. S. Huang ◽

K. K. Tiong ◽

Fred H. Pollak ◽

...

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/31/2/001 ◽

1998 ◽

Vol 31 (2) ◽

pp. 159-164 ◽

Author(s):

Wu Lu ◽

Jin-Hee Lee ◽

Krishnamachar Prasad ◽

Geok-Ing Ng ◽

Per Lindström

Keyword(s):

Electron Mobility ◽

Carrier Density ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

Photoluminescence Spectra ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Nondestructive Determination

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Growth and characterization of metamorphic In[sub x](AlGa)[sub 1−x]As/In[sub x]Ga[sub 1−x]As high electron mobility transistor material and devices with X=0.3–0.4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591477 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1638 ◽

Author(s):

W. E. Hoke ◽

P. S. Lyman ◽

C. S. Whelan ◽

J. J. Mosca ◽

A. Torabi ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/3/035013 ◽

2009 ◽

Vol 24 (3) ◽

pp. 035013 ◽

Author(s):

Ching-Hwa Ho ◽

Jian-Shen Li ◽

Yu-Shyan Lin

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Subband Structure

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Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

physica status solidi (b) ◽

10.1002/pssb.201900589 ◽

2020 ◽

Vol 257 (4) ◽

pp. 1900589 ◽

Author(s):

Tadatoshi Ito ◽

Ryota Sakamoto ◽

Tatsuya Isono ◽

Yongzhao Yao ◽

Yukari Ishikawa ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

Materials Science and Engineering C ◽

10.1016/j.msec.2007.10.068 ◽

2008 ◽

Vol 28 (5-6) ◽

pp. 787-790 ◽

Author(s):

M. Gassoumi ◽

J.M. Bluet ◽

G. Guillot ◽

C. Gaquière ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

High Electron Mobility ◽

Transient Spectroscopy

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