Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition
1994 ◽
Vol 33
(Part 1, No. 7A)
◽
pp. 3853-3859
◽
1994 ◽
Vol 33
(Part 2, No. 12B)
◽
pp. L1759-L1761
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2005 ◽
Vol 44
(9A)
◽
pp. 6412-6416
◽
2000 ◽
Vol 7
(1)
◽
pp. 12