Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

1999 ◽  
Vol 74 (20) ◽  
pp. 2993-2995 ◽  
Author(s):  
Q. Yang ◽  
D. Scott ◽  
J. Miller ◽  
P. Meyer ◽  
H. C. Kuo ◽  
...  
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