[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
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Determination of the interface structure of very thin GaInAs/InP quantum wells

2002 ◽  
Author(s):  
K. Streubel ◽  
F. Scholz ◽  
V. Harle ◽  
M. Bode ◽  
M. Grundmann ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interface Structure

InGaAs/InP submicron gate microwave power transistors for 20 GHz applications

2002 ◽  
Author(s):  
G.A. Johnson ◽  
M.D. Biedenbender ◽  
V.J. Kapoor ◽  
L.J. Messick ◽  
R. Nguyen ◽  
...  
Keyword(s):  
Microwave Power ◽  
Power Transistors ◽  
Microwave Power Transistors

Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures

2002 ◽  
Author(s):  
C. Pickering ◽  
N.S. Garawal ◽  
D. Lancefield ◽  
J.P. Piel ◽  
R.T. Blunt
Keyword(s):  
Multilayer Structures ◽  
Thickness Measurements ◽  
Non Destructive

Selective growth of InP in the low pressure hydride VPE system

2002 ◽  
Author(s):  
R. Beccard ◽  
A. Dehe ◽  
K. Heime ◽  
G. Laube ◽  
P. Speier
Keyword(s):  
Low Pressure ◽  
Selective Growth

Influence of a surface layer on DC- and RF-performance of AlInAs/GaInAs HFETs

2002 ◽  
Author(s):  
J. Dickmann ◽  
H. Dambkes ◽  
H. Nickel ◽  
R. Losch ◽  
W. Schlapp ◽  
...  
Keyword(s):  
Surface Layer ◽  
Rf Performance

Passivation of InP surfaces

2002 ◽  
Author(s):  
W. Kulisch ◽  
F. Kiel ◽  
A. Bock ◽  
H.J. Frenck ◽  
R. Kassing
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