[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
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High-speed monolithic coherent optical receiver with a waveguide coupler and lateral PIN photodiodes integrated on a InP substrate

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147443 ◽

2002 ◽

Author(s):

N. Yasuoka ◽

T. Sanada ◽

H. Hamaguchi ◽

M. Makiuchi ◽

T. Mikawa ◽

...

Keyword(s):

Optical Receiver ◽

Waveguide Coupler ◽

Inp Substrate ◽

Pin Photodiodes

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Optical characterization of strained III-V compound semiconductor epilayers

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147397 ◽

2002 ◽

Author(s):

E.S. Koteles ◽

D. Kenneson ◽

M. Abdalla

Keyword(s):

Optical Characterization ◽

Compound Semiconductor

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InGaAs/InP submicron gate microwave power transistors for 20 GHz applications

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147403 ◽

2002 ◽

Author(s):

G.A. Johnson ◽

M.D. Biedenbender ◽

V.J. Kapoor ◽

L.J. Messick ◽

R. Nguyen ◽

...

Keyword(s):

Microwave Power ◽

Power Transistors ◽

Microwave Power Transistors

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Substrate orientation and growth temperature dependence of PL lifetimes in Ga/sub 0.52/In/sub 0.48/P

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147295 ◽

2002 ◽

Author(s):

M.C. DeLong ◽

W.D. Ohlsen ◽

P.C. Taylor ◽

J.M. Olson

Keyword(s):

Temperature Dependence ◽

Growth Temperature ◽

Substrate Orientation ◽

Growth Temperature Dependence

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Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147411 ◽

2002 ◽

Author(s):

C. Pickering ◽

N.S. Garawal ◽

D. Lancefield ◽

J.P. Piel ◽

R.T. Blunt

Keyword(s):

Multilayer Structures ◽

Thickness Measurements ◽

Non Destructive

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Selective growth of InP in the low pressure hydride VPE system

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147301 ◽

2002 ◽

Author(s):

R. Beccard ◽

A. Dehe ◽

K. Heime ◽

G. Laube ◽

P. Speier

Keyword(s):

Low Pressure ◽

Selective Growth

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Influence of a surface layer on DC- and RF-performance of AlInAs/GaInAs HFETs

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147356 ◽

2002 ◽

Author(s):

J. Dickmann ◽

H. Dambkes ◽

H. Nickel ◽

R. Losch ◽

W. Schlapp ◽

...

Keyword(s):

Surface Layer ◽

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Rapid thermal low pressure (metallorganic) chemical vapor deposition of thin films onto InP

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147451 ◽

2002 ◽

Author(s):

A. Katz

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

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Determination of the interface structure of very thin GaInAs/InP quantum wells

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147414 ◽

2002 ◽

Author(s):

K. Streubel ◽

F. Scholz ◽

V. Harle ◽

M. Bode ◽

M. Grundmann ◽

...

Keyword(s):

Quantum Wells ◽

Interface Structure

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Characterization of InP and related materials by light scattering and photoluminescence

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147336 ◽

2002 ◽

Author(s):

E.F. Steigmeier ◽

H. Auderset ◽

J.E. Epler

Keyword(s):

Light Scattering

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